Hydrogen interaction with Si(1 1 1) √3x√3-B surfaces

Applied Surface Science

Volumn 237, Issue 1-4, 2004, Pages 115-118

  Yoshimura, Masamichi ^a   Watanabe, Kazutaka ^a   Ueda, Kazuyuki ^a  

^a TOYOTA TECHNOLOGICAL INSTITUTE   (Japan)

Author keywords

Boron; Hydrogen; Si(1 1 1); Silicon; STM

Indexed keywords

BORON; CHEMISORPTION; ELECTRONIC STRUCTURE; ETCHING; HYDROGEN; LOW ENERGY ELECTRON DIFFRACTION; MATHEMATICAL MODELS; REACTION KINETICS; SCANNING TUNNELING MICROSCOPY; SURFACE STRUCTURE;

CHAIN CLUSTERS; HYDROGEN ETCHING; SI (1 1 1); TEMPERATURE PROGRAMMED DESORPTION (TPD);

SILICON COMPOUNDS;

EID: 4644343857     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(04)00998-5     Document Type: Conference Paper

References (30)

1. Bedrossian P., Meade R.D., Mortensen K., Chen D.M., Golovchenko J.A., Vanderbilt D. Phys. Rev. Lett. 63:1989;1257.
2. Headrick R.L., Robinson I.K., Vlieg E., Feldman L.C. Phys. Rev. Lett. 63:1989;1253.
3. Lyo I.-W., Kaxiras E., Avouris Ph. Phys. Rev. Lett. 63:1989;1261.
4. Kaxiras E., Pandey K.C., Himpsel F.J., Tromp R.M. Phys. Rev. B. 41:1990;1262.
5. Grehk T.M., Martensson P., Nicholls J.M. Phys. Rev. B. 46:1992;2357.
6. Thibaudau F., Roge T.P., Mathiez Ph., Dumas Ph., Salvan F. Europhys. Lett. 25:1994;353.
7. Zotov A.V., Kulakov M.A., Ryzhkov S.V., Saranin A.A., Lifshits V.G., Bullemer B., Eisele I. Surf. Sci. 345:1996;313.
8. Lyo I.-W., Avouris Ph. Science. 245:1989;1369.
9. Shi H.Q., Radny M.W., Smith P.V. Phys. Rev. B. 66:2002;085329.
10. Wong T.M.H., McKinnon A.W., Welland M.E. Surf. Sci. 328:1995;227.
11. Zavodinsky V.G., Kuyanov I.A., Chukurov E.N. J. Vac. Sci. Technol. A. 17:1999;2709.
12. Stimpel T., Schulze J., Hoster H.E., Eisele I., Baumgartner H. Appl. Surf. Sci. 162-163:2000;384.
13. Roge T.P., Thibaudau F., Mathiez Ph., Dumas Ph., Salvan F. J. Vac. Sci. Technol. B. 12:1994;2040.
14. Zotov A.Z., Kulakov M.A., Bullemer B., Eisele I. Phys. Rev. B. 53:1996;12902.
15. Korobtsov V.V., Lifshits V.G., Zotov A.V. Surf. Sci. 195:1988;466.
16. Stimpel T., Hoster H.E., Schulze J., Baumgartner H., Eisele I. Thin Solid Films. 380:2000;29.
17. Schulze J., Baumgartner H., Fink C., Dollinger G., Gentchev I., Gorgens L., Hansch W., Hoster H.E., Metzger T.H., Paniago R., Stimpel T., Sulima T., Eisele I. Thin Solid Films. 369:2000;10.
18. Zotov A.V., Kulakov M.A., Ryzhkov S.V., Lifshits V.G., Bullemer B., Eisele I. Surf. Sci. 352-254:1996;358.
19. Stimpel T., Hoster H.E., Schulze J., Baumgartner H., Eisele I. Mater. Sci. Technol. 18:2002;721.
20. Schulze J., Stimpel T., Baumgartner H., Eisele I. Appl. Surf. Sci. 162-163:2000;332.
21. Pelletier S., Ehret E., Gautier B., Palmino F., Labrune J.C. Phys. Rev. B. 60:1999;11645.
22. Stimpel T., Schraufstetter M., Baumgartner H., Eisele I. Mater. Sci. Eng. B. 89:2002;394.
23. Avouris Ph., Lyo I.-W., Bozso F., Kaxiras E. J. Vac. Sci. Technol. A. 8:1990;3405.
24. Taguchi Y., Date M., Takagi N., Aruga T., Nishijima M. Phys. Rev. B. 50:1994;17440.
25. Bozso F., Avouris Ph. Phys. Rev. B. 44:1991;9129.
26. Ohnishi N. Jpn. J. Appl. Phys. 10:1971;517.
27. Chen P.J., Colaianni M.L., Yates J.T. Jr. J. Appl. Phys. 70:1991;2954.
28. Wang S., Radny M.W., Smith P.V. Phys. Rev. B. 56:1997;3575.
29. Wang S., Radny M.W., Smith P.V. J. Phys.: Condens. Matter. 9:1997;4535.