Self assembling growth of triangular pyramidal Ge islands on a Si(111)-√3×√3-R30°-B surface phase

Applied Surface Science

Volumn 162, Issue , 2000, Pages 332-339

  Schulze, J ^a   Stimpel, T ^a   Baumgartner H ^a   Eisele, I ^a  

^a BUNDESWEHR UNIVERSITY MUNICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; COMPOSITION EFFECTS; CRYSTAL ATOMIC STRUCTURE; CRYSTAL ORIENTATION; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR GROWTH; SEMICONDUCTOR SUPERLATTICES; SILICON WAFERS; SURFACE STRUCTURE; THERMAL EFFECTS;

DANGLING BONDS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0034248428     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(00)00212-9     Document Type: Article

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