Structural defects of the Si(111)√3 × √3-B surface studied by scanning tunneling microscopy

Surface Science

Volumn 345, Issue 3, 1996, Pages 313-319

  Zotov, A V ^a,b   Kulakov, M A ^a   Ryzhkov, S V ^b   Saranin, A A ^b   Lifshits, V G ^b   Bullemer, B ^a   Eisele, I ^a  

^a BUNDESWEHR UNIVERSITY MUNICH   (Germany)

^b RUSSIAN ACADEMY OF SCIENCES   (Russian Federation)

Author keywords

Boron; Scanning tunneling microscopy; Silicon; Surface defects

Indexed keywords

ANNEALING; BORON; CRYSTAL ATOMIC STRUCTURE; CRYSTAL DEFECTS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

ADATOMS; DEEP HOLES; DEFECT DENSITY; RING LIKE SIX ADATOMS; SURFACE RECONSTRUCTION;

SURFACES;

EID: 0029756434     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(95)00889-6     Document Type: Article

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