Si overgrowth on Si(111)√3 × √3 -B surface phase

Surface Science

Volumn 352-354, Issue , 1996, Pages 358-363

  Zotov, A V ^a,b   Kulakov, M A ^a   Ryzhkov, S V ^b   Lifshits, V G ^b   Bullemer, B ^a   Eisele, I ^a  

^a BUNDESWEHR UNIVERSITY MUNICH   (Germany)

^b RUSSIAN ACADEMY OF SCIENCES   (Russian Federation)

Author keywords

Boron; Growth; Low energy electron diffraction (LEED); Molecular beam epitaxy; Scanning tunneling microscopy; Silicon; Surface diffusion; Surface segregation

Indexed keywords

AMORPHOUS MATERIALS; ANNEALING; ATOMS; DEFECTS; DOPING (ADDITIVES); LOW ENERGY ELECTRON DIFFRACTION; MOLECULAR BEAM EPITAXY; NUCLEATION; SCANNING TUNNELING MICROSCOPY; SILICON;

BILAYERS; OVERGROWTH; SURFACE DIFFUSION; SURFACE SEGREGATION;

BORON;

EID: 0030147720     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(95)01160-9     Document Type: Article

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