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Volumn 369, Issue 1, 2000, Pages 10-15
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Formation of silicon(111) boron surface phases and their influence on the epitaxial growth of silicon and germanium
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Author keywords
[No Author keywords available]
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Indexed keywords
ATOMIC FORCE MICROSCOPY;
MOLECULAR BEAM EPITAXY;
NANOSTRUCTURED MATERIALS;
SCANNING TUNNELING MICROSCOPY;
SEMICONDUCTING BORON;
SEMICONDUCTING GERMANIUM;
SEMICONDUCTOR GROWTH;
SEMICONDUCTOR QUANTUM DOTS;
SUBSTRATES;
X RAY SCATTERING;
ELASTIC RECOIL DETECTION (ERD);
SEMICONDUCTING SILICON;
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EID: 0342794216
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/S0040-6090(00)00825-7 Document Type: Article |
Times cited : (10)
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References (13)
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