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Volumn 369, Issue 1, 2000, Pages 10-15

Formation of silicon(111) boron surface phases and their influence on the epitaxial growth of silicon and germanium

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING BORON; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM DOTS; SUBSTRATES; X RAY SCATTERING;

EID: 0342794216     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)00825-7     Document Type: Article
Times cited : (10)

References (13)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.