Oxidative annealing of ZnSe/GaAs heterostructures

Materials Letters

Volumn 62, Issue 24, 2008, Pages 3969-3971

  Maksimov, Oleg ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

Electronic materials; Luminescence; Thin films

Indexed keywords

ANNEALING; CRYSTALS; OPTICAL PROPERTIES; OXYGEN; SEMICONDUCTING CADMIUM TELLURIDE; STRUCTURAL PROPERTIES; SURFACE REACTIONS; X RAY DIFFRACTION ANALYSIS; ZINC; ZINC OXIDE;

(PL) PROPERTIES; FILM SURFACES; FILM-SUBSTRATE INTERFACES; HETEROSTRUCTURES; HIGH-TEMPERATURE PROCESSING; LOW TEMPERATURE PROCESSING; OPTICAL (PET) (OPET); OXYGEN ATMOSPHERES; POLY CRYSTALLINE; TEXTURED ZNO FILMS; X RAY DIFFRACTION (XRD);

X RAY FILMS;

EID: 46249129654     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matlet.2008.05.024     Document Type: Article

References (43)

1. Ozgur U., Alivov Y.I., Liu C., Teke A., Reschikov M.A., Dogan S., Avrutin V., Cho S.J., and Morkoc H. J Appl Phys 98 (2005) 041301
2. Van de Walle C.G. Phys Rev Lett 85 (2000) 1012-1015
3. Kohan A.F., Ceder G., Morgan D., and Van de Walle C.G. Phys Rev B 61 (2000) 15019-15027
4. Lee E.C., Kim Y.S., Jin Y.G., and Chang K.J. Phys Rev B 64 (2001) 085120
5. Erhart P., Albe K., and Klein A. Phys Rev B 73 (2006) 205203
6. Janotti A., and Van de Walle C.G. Phys Rev B 76 (2007) 165202
7. Wanf L.G., and Zunger A. Phys Rev Lett 90 (2003) 256401
8. Barnes T.M., Olson K., and Wolden C.A. Appl Phys Lett 86 (2005) 112112-112114
9. Ryu Y.R., Zhu S., Look D.C., Wrobel J.M., Jeong H.M., and White H.W. J Crystal Growth 216 (2000) 330-334
10. Look D.C., Renlund G.M., Burgener R.H., and Sizelove J.R. Appl Phys Lett 85 (2004) 5269-5271
11. Vaithinathan V., Lee B.T., Chang C.W., Asokan K., and Kim S.S. Appl Phys Lett 88 (2006) 112103
12. Yuen C., Yu S.F., Leong E.S.P., Lau S.P., Pita K., Yang H.Y., and Chen T.P. J Appl Phys 101 (2007) 094905
13. Moon T.H., Jeong M.C., Lee W., and Myoung J.M. Appl Surf Sci 240 (2005) 280-285
14. Ryu Y., Lee T., Lubdugan J.A., White H.W., and Park Y.S. Appl Phys Lett 87 (2005) 153504
15. Sun J.C., Zhao J.Z., Liang H.W., Bian J.M., Hu L.Z., Zhang H.Q., Liang X.P., Liu W.F., and Du G.T. Appl Phys Lett 90 (2007) 121128
16. Liu W.F., Bian J.M., Hu L.Z., Liang H.W., Zang H.Q., Sun J.C., Zhao Z.W., Liu A.M., and Du G.T. Solid State Communications 142 (2007) 655-658
17. Przeździecka E., Kamińska E., Korona K.P., Dynowska E., Dobrowolski W., Jakieła R., Kłopotowski Ł., and Kossut J. Semicond Sci Technol 22 (2007) 10-14
18. Przeździecka E., Kamińska E., Dynowska E., Dobrowolski W., Jakieła R., Kłopotowski Ł., Sawicki M., Kiecana M., and Kossut J. Phys Stat Sol C 3 (2006) 988-991
19. Arenas O.L., Nair M.T.S., and Nair P.K. Semicond Sci Technol 12 (1997) 1323-1330
20. Fu-Jian Z., Hong-Lei M., Wei L., Wei D., Xi-Jian Z., Hong-Di X., Jin M., Feng J., Cheng-Shan X., and Hui-Zhao Z. Chinese Phys Lett 22 (2005) 907-910
21. Wang S., Xia G., Shao J., and Fan Z. J Alloys & Compounds 424 (2006) 304-306
22. Miyake A., Kominami H., Aoki T., Azuma N., Nakanish Y., and Hatanaka Y. Phys Stat Sol B 229 (2002) 829-833
23. Nakano Y., Morikawa T., Ohwaki T., and Taga Y. Appl Phys Lett 88 (2006) 172103
24. Maksimov O., and Liu B.Z. J. Crystal Growth 310 (2008) 3149-3153
25. Rogers D.J., Teherani F.H., Monteiro T., Soares M., Neves A., Carmo M., Pereira S., Correia M.R., Lusson A., Alves E., Barradas N.P., Morrod J.K., Prior K.A., Kung P., Yasan A., and Razeghi M. Phys Stat Sol C 3 (2006) 1038-1041
26. Ryu M.K., Lee S.H., Jang M.S., Panin G.N., and Kang T.W. J Appl Phys 92 (2002) 154-158
27. Liu H.F., Chua S.J., Hu G.X., Gong H., and Xiang N. J Appl Phys 102 (2007) 063507
28. Yuldashev S.Y.U., Panin G.N., Choi S.W., Yalishev V.S.h., Nosova L.A., Ryu M.K., Lee S., Jang M.S., Chung K.S., and Kang T.W. Jpn J Appl Phys 42 (2003) 3333-3336
29. Li B.S., Liu Y.C., Zhi Z.Z., Shen D.Z., Lu Y.M., Zhang J.Y., Fan X.W., Mu R.X., and Henderson D.o.n.O. J Mater Res 18 (2003) 8-13
30. Fujimura N., Nishihara T., Goto S., Xu J., and Ito T. J Crystal Growth 130 (1993) 269-279
31. Cullity B.D. Elements of X-ray Diffraction. 2nd ed (1978), Addison-Wesley, Reading, MA
32. Lin B., Fu Z., and Jia Y. Appl Phys Lett 79 (2001) 943-945
33. Omata T., Ueda N., Ueda K., and Kawazoe H. Appl Phys Lett 64 (1994) 1077-1078
34. Lindroos S., and Leskelä M. Int J Inorg Mat 2 (2000) 197-201
35. Yi S.S., Kim I.W., Bae J.S., Moon B.K., Kim S.B., and Jeong J.H. Mat Lett 57 (2002) 904-909
36. Kim J.S., Park H.L., Chon C.M., Moon H.S., and Kim T.W. Solid State Communications 129 (2004) 163-167
37. Benson Jr. R.B., Littlejohn M.A., Pao P.S., and Sarin H.K. Appl Phys Lett 27 (1975) 69-71
38. Chang K.W., and Wu J.J. Phys Chem B 109 (2005) 13572-13577
39. Jung E.S., Lee J.Y., Kim H.S., and Jang N.W. J Korean Phys Soc 47 (2005) S480-S484
40. Wen Z., Wang L., Fang W., Pu Y., Luo X., Zheng C., Dai J., and Jiang F. Chinese J Sem 26 (2005) 498-501
41. Kambilafka V., Voulgaropoulou P., Dounis S., Iliopoulos E., Androulidaki M., Šály V., Ružinský M., and Aperathitis E. Superlattices & Microstructures 42 (2007) 55-61
42. Song Y.Y., Park K.S., Son D.V., Yu S.C., Kang H.J., Shin S.W., Whang C.N., Lee J.H., Song J.H., and Lee K.W. J Korean Phys Soc 60 (2007) 1706-1710
43. Lim W., Craciun V., Siebein K., Gila B.P., Norton D.P., Pearton S.J., and Ren F. Appl Surf Sci 254 (2008) 2396-2400