Electrical and optical properties of ZnO films grown on GaAs substrates

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 6 A, 2003, Pages 3333-3336

  Yuldashev, Shavkat U ^a   Panin, Gennady N ^a   Choi, Sung Woo ^a   Yalishev, Vadim Sh ^b   Nosova, Ludmila A ^b   Ryu, Min Ki ^c   Lee, Sanghern ^c   Jang, Min Su ^c   Chung, Kwan Soo ^d   Kang, Tae Won ^a  

^a Dongguk University   (South Korea)

^b S YU YUNUSOV INSTITUTE OF THE CHEMISTRY OF PLANT SUBSTANCES   (Uzbekistan)

^c Pusan National University   (South Korea)

^d Kyung Hee University   (South Korea)

Author keywords

P type conductivity; Photoluminescence; Thermal annealing; ZnO

Indexed keywords

ANNEALING; DIFFUSION IN SOLIDS; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRIC PROPERTIES; HALL EFFECT; MAGNETRON SPUTTERING; OPTICAL PROPERTIES; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES; THERMAL EFFECTS; X RAY ANALYSIS;

HALL COEFFICIENT; XRAY MICROANALYSIS;

ZINC OXIDE;

EID: 0041880646     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.3333     Document Type: Article

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