XtreMOS™: The first integrated power transistor breaking the silicon limit

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2006, Pages

  Moens, P ^a   Bauwens, F ^a   Baele, J ^a   Vershinin, K ^b   De Backer, E ^a   Narayanan, E M Sankara ^b   Tack, M ^a  

^a ON SEMICONDUCTOR   (United States)

^b DE MONTFORT UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON DEVICES; NONMETALS; POWER ELECTRONICS; POWER TRANSMISSION; SILICON; TRANSISTORS;

INTEGRATED POWER; ON-STATE RESISTANCE; POWER IC; POWER TRANSISTORS;

CMOS INTEGRATED CIRCUITS;

EID: 46049085836     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2006.346933     Document Type: Conference Paper

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