Industrialisation of resurf stepped oxide technology for power transistors

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volumn 2006, Issue , 2006, Pages

  Gajda, M A ^a   Hodgskiss, S W ^a   Mounfield, L A ^a   Irwin, N T ^a   Koops, G E J ^b   Van Dalen, R ^b  

^a NXP SEMICONDUCTORS   (Netherlands)

^b PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DEFECT DENSITY; ELECTRIC LOADS; POLYSILICON; SWITCHING;

ETCH BACK; FABRICATION PROCESSES; HIGH FREQUENCY APPLICATIONS; RSO (RESURF STEPPED OXIDE) TRANSISTORS;

TRANSISTORS;

EID: 34247509800     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. 3 specific on-resistance for 20V Trench MOSFETs', ISPSD 2003, pp 32-35.
2. G. Deboy et al, 'A new generation of high voltage MOSFETs break the limit line of silicon', IEDM, pp.683-685, 1998.
3. C. Rochefort et al., 'A scalable trench etch based process for high voltage vertical RESURF MOSFETs', ISPSD 2005, pp 35-38.
4. G.E.J Koops et al., 'Resurf Stepped Oxide (RSO) MOSFET for 85V having a record-low specific on-resistance', ISPSD 2004, pp 185-188.