Breakthrough of on-resistance Si limit by Super 3D MOSFET under 100V breakdown voltage

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volumn 2006, Issue , 2006, Pages

  Yamaguchi, Hitoshi ^a   Urakami, Yasushi ^a   Sakakibara, Jun ^a  

^a DENSO CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; ELECTRIC BREAKDOWN; ELECTRIC RESISTANCE; ETCHING; RELIABILITY THEORY; SEMICONDUCTING SILICON; SOFTWARE PROTOTYPING; SWITCHING SYSTEMS;

SUPER 3D MOSFET STRUCTURE; TRENCH FILLING EPITAXIAL PROCESS; UNCLAMPED INDUCTIVE SWITCHING;

MOSFET DEVICES;

EID: 34247548854     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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