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Volumn 44, Issue 9-11 SPEC. ISS., 2004, Pages 1361-1368

Low frequency noise as a reliability diagnostic tool in compound semiconductor transistors

Author keywords

[No Author keywords available]

Indexed keywords

ACOUSTIC NOISE MEASUREMENT; ELECTRIC CURRENTS; INTERFACES (MATERIALS); MICROWAVE DEVICES; PASSIVATION; RELIABILITY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 4544358392     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2004.07.035     Document Type: Conference Paper
Times cited : (12)

References (20)
  • 1
    • 0028549703 scopus 로고
    • Low-frequency noise in modem bipolar transistors: Impact of intrinsic transistors and parasitic series resistances
    • T. G. M. Kleinpenning, Low-frequency noise in modem bipolar transistors: impact of intrinsic transistors and parasitic series resistances, IEEE Trans. Electron Devices, 41, (1994), 1981-1991.
    • (1994) IEEE Trans. Electron Devices , vol.41 , pp. 1981-1991
    • Kleinpenning, T.G.M.1
  • 2
    • 0028547276 scopus 로고
    • Noise as a diagnostic tool for quality and reliability of electronic devices
    • L. K. J. Vandamme, Noise as a diagnostic tool for quality and reliability of electronic devices, IEEE Trans. Electron Devices, 41, (1994), 2176-2187.
    • (1994) IEEE Trans. Electron Devices , vol.41 , pp. 2176-2187
    • Vandamme, L.K.J.1
  • 4
    • 0032182013 scopus 로고    scopus 로고
    • Hot electron effects and degradation of GaAs and InP HEMTs for microwave and millimeter-wave applications
    • R. Menozzi, Hot electron effects and degradation of GaAs and InP HEMTs for microwave and millimeter-wave applications, Semiconductor Science Technology, 13, (1998), 1053-1063.
    • (1998) Semiconductor Science Technology , vol.13 , pp. 1053-1063
    • Menozzi, R.1
  • 5
    • 0031250207 scopus 로고    scopus 로고
    • HBT IC manufacturability and reliability
    • M. Hafizi, HBT IC manufacturability and reliability, Solid-State Electronics, 41, (1997), 1591.
    • (1997) Solid-state Electronics , vol.41 , pp. 1591
    • Hafizi, M.1
  • 11
    • 0032713670 scopus 로고    scopus 로고
    • The effect of gate recess profile on device performance of GaInP/InGaAs DCFET's
    • S. S. Lu, C. C. Meng, Y. S. Lin, H. Lan, The effect of gate recess profile on device performance of GaInP/InGaAs DCFET's, IEEE Trans. Electron Devices, 46, (199.9) 48-53.
    • (1999) IEEE Trans. Electron Devices , vol.46 , pp. 48-53
    • Lu, S.S.1    Meng, C.C.2    Lin, Y.S.3    Lan, H.4
  • 13
    • 0030150069 scopus 로고    scopus 로고
    • Measurement and comparison of 1/f noise and g-r noise in silicon homojunction and III-V heterojunction bipolar transistors
    • A.K. Kirtania, M.B. Das, S. Chandrasekar, L.M, Lunardi, G.J. Qua, R.A. Hamm, L. Yang, Measurement and comparison of 1/f noise and g-r noise in silicon homojunction and III-V heterojunction bipolar transistors, IEEE Trans. Electron Devices, 43, (1996), 784-792.
    • (1996) IEEE Trans. Electron Devices , vol.43 , pp. 784-792
    • Kirtania, A.K.1    Das, M.B.2    Chandrasekar, S.3    Lunardi, L.M.4    Qua, G.J.5    Hamm, R.A.6    Yang, L.7
  • 14
    • 0032206055 scopus 로고    scopus 로고
    • Low-frequency noise characterization of self-aligned AlGaAs/GaAs heterojunction bipolar transistors with a noise corner frequency below 3 kHz
    • J.H. Shin, J. Kim, Y. Chung, J. Lee, Y. Suh, K.H. Ahn, B. Kim, Low-frequency noise characterization of self-aligned AlGaAs/GaAs heterojunction bipolar transistors with a noise corner frequency below 3 kHz, IEEE Trans. Microwave Theory and Techniques, 46, (1998), 1604-1613
    • (1998) IEEE Trans. Microwave Theory and Techniques , vol.46 , pp. 1604-1613
    • Shin, J.H.1    Kim, J.2    Chung, Y.3    Lee, J.4    Suh, Y.5    Ahn, K.H.6    Kim, B.7
  • 15
    • 0032307758 scopus 로고    scopus 로고
    • Low frequency noise of InP/InOaAs heterojunction bipolar transistors
    • Y. Takanashi, H. Fukano, Low frequency noise of InP/InOaAs heterojunction bipolar transistors, IEEE Trans. Electron Devices, 45, (1998), 2400-2406.
    • (1998) IEEE Trans. Electron Devices , vol.45 , pp. 2400-2406
    • Takanashi, Y.1    Fukano, H.2
  • 16
    • 0033906641 scopus 로고    scopus 로고
    • Relation between low-frequency noise and long-term reliability of single AlGaAs/GaAs power HBT's
    • S. Mohammadi, D. Pavlidis, B. Bayraktaroglu, Relation between low-frequency noise and long-term reliability of single AlGaAs/GaAs power HBT's, IEEE Trans. Electron Devices, 47, (2000), 677-686.
    • (2000) IEEE Trans. Electron Devices , vol.47 , pp. 677-686
    • Mohammadi, S.1    Pavlidis, D.2    Bayraktaroglu, B.3
  • 19
  • 20
    • 4544367779 scopus 로고    scopus 로고
    • InP/InGaAs/InP DHBT submitted to bias and thermal stresses: LF base noise analysis
    • Las Palmas, Spain, May
    • J.C. Martin, C. Maneux, N. Labat, A. Touboul, InP/InGaAs/InP DHBT submitted to bias and thermal stresses: LF base noise analysis, Fluctuations and Noise SPIE Conference, Las Palmas, Spain, May 2004.
    • (2004) Fluctuations and Noise SPIE Conference
    • Martin, J.C.1    Maneux, C.2    Labat, N.3    Touboul, A.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.