Comparison of RF and DC life-test effects on GaAs power MESFETs

Microelectronics Reliability

Volumn 40, Issue 8-10, 2000, Pages 1727-1731

  Lambert, B ^a   Saysset Malbert, N ^a   Labat, N ^a   Verdier, F ^a   Touboul, A ^a   Huguet, P ^b   Garat, F ^c  

^a UNIVERSITÉ BORDEAUX 1   (France)

^b United Monolothic Semiconductors   (France)

^c EUROPEAN SPACE AGENCY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0009051130     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(00)00113-X     Document Type: Article

References (8)

1. K. Iizuka, T. Hashizume, H. Hasegawa, « Small-signal response of interface states at passivated InGaAs surfaces from low frequencies up to microwave frequencies », Solid-State Electronics, Vol. 41, N°10, pp. 1463-1468, 1997
2. J.M.C. Hwang, «Relationship between gate lag, power drift, and power slump of pseudomorphic high electron mobility transistors » Solid-State Electronics, Vol. 43, N°8, pp. 1325-1331, 1999
3. M. Luo, G. Bosman, A. Van Der Ziel, L.L. Hench « Theory and experiments of 1/f noise in Schottky-barrier diodes operating in the thermoionic-emission mode » IEEE Transaction on Electron Devices, Vol ED-35, N°8, 1988
4. N. Saysset, N. Labat, A. Touboul, Y. Danto, « Complementary of drain current transient spectroscopy (DCTS) and G.R. noise analysis to detect traps in HEMTs », Proc. of European Solid State Device Research Conference (Ed. Frontières), ESSDERC'96, Bologna (Italy), pp 1005-1008, Septembre 1996
5. N. Saysset -Malbert, B. Lambert, C. Maneux, N. Labat, A. Touboul, Y. Danto, L.K.J. Vandamme, P. Huguet, P. Auxemery, F. Garat, « Effects of RF life-test on LF electrical parameters of GaAs power MESFETs » Proc. of ESREF99, Microelectronics Reliability, Vol. 39, N°6/7, 1999
6. J.P.R. David, J.E. Stich, M.S. Stern, « Gate-drain avalanche breakdown in power MESFET's », IEEE Transactions on Electron Devices, Vol. ED-29, N°10, 1982
7. C.L. Li, T.M. Barton, R.E. Miles « Avalanche breakdown and surface deep-level trap effect in GaAs MESFET's », IEEE Transactions On Electron Devices, Vol. ED- 40, N°4, 1993
8. L.K.J. Vandamme, B. Orsal « l/f noise in short n-P+ diffusion-current-dominated (HgCd)Te avalanche photodiodes » IEEE Transaction on Electron Devices, Vol ED-35, N°4, 1988