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Volumn 45, Issue 6, 1998, Pages 1369-1373

Measurement of the switching speed of single FET's

Author keywords

Device delay; Large signal; Measurement; Propagation delay; Signal delay; Switching speed; Time domain

Indexed keywords

DIGITAL SIGNAL PROCESSING; GATES (TRANSISTOR); MICROELECTRONICS; SWITCHING CIRCUITS; TIME DOMAIN ANALYSIS;

EID: 0032095762     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.678581     Document Type: Article
Times cited : (2)

References (11)
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  • 2
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  • 9
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    • Identification of gate electron discontinuities in submicron CMOS technologies, and effect on circuit performance
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    • K. A. Jenkins, J. N. Burghartz, and P. D. Agnello, Identification of gate electron discontinuities in submicron CMOS technologies, and effect on circuit performance, IEEE Trans. Electron Devices, vol. 43, pp. 759-765, May 1996.
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  • 10
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    • Calibration methods for time domain network analysis
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    • Hayden, L.A.1    Tripathi, V.K.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.