Self-organization of ordered nano- and microstructures on the semiconductor surface under the action of laser radiation

Laser Physics

Volumn 18, Issue 6, 2008, Pages 682-718

  Emel'yanov, V I ^a  

^a MOSCOW STATE UNIVERSITY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

LASER BEAMS; LASERS; LITHOGRAPHY; MICROSTRUCTURE; MODULATION; MOLECULAR BEAM EPITAXY; MORPHOLOGY; POINT DEFECTS; PULSED LASER APPLICATIONS; PULSED LASER DEPOSITION; RADIATION; SEMICONDUCTOR LASERS; SEMICONDUCTOR MATERIALS; SURFACE DEFECTS; SURFACE PROPERTIES; SURFACES;

(1 1 0) SURFACE; (E ,2E) THEORY; ANISOTROPIC STRESSES; EVOLUTION (CO); EXPERIMENTAL RESULTS; FLUENCES; INSTABILITY THEORY; ION BEAM (IB) IRRADIATION; LASER ACTIONS; LASER FLUENCE; LINEAR DEPENDENCES; SELF-ORGANIZATION (SO); SEMI CONDUCTOR SURFACES; SEMI-CONDUCTORS; STRUCTURE SYMMETRY; SUB-SURFACE LAYERS; SURFACE RELIEFS;

LASER THEORY;

EID: 45249094717     PISSN: 1054660X     EISSN: 15556611     Source Type: Journal    
DOI: 10.1134/S1054660X08060029     Document Type: Article

References (78)

1. L. Dal Negro, M. Casanelli, L. Pavesi, et al., Appl. Phys. Lett. 82, 4636 (2003).
2. A. J. Kenyon, Semicond. Sci. Technol. 20, R65 (2005).
3. F. Iacona, D. Pacifici, A. Irrera, et al., Appl. Phys. Lett. 81, 3242 (2002).
4. S. K. Lazaruk, A. A. Leshok, V. A. Labunov, and V. E. Borisenko, Fiz. Tekh. Poluprovodn. 39, 149 (2005) [Semiconductors 39, 136 (2005)].
5. C. Sonnichsen, S. Geier, N. E. Hecker, et al., Appl. Phys. Lett. 77, 2949 (2000).
6. L. Ansheng, A. Rahmani, G. W. Bryant, et al., Opt. Soc. Am. A 18, 704 (2001).
7. N. I. Zheludev, Contemp. Phys. 48, 365 (2002).
8. M. Valden, X. Lai, and D. W. Goodman, Science 281, 1647 (1998).
9. G. A. Somorjai, Appl. Surf. Sci. 121, 1 (1997).
10. A. Orlov et al., Science 277, 928 (1997).
11. S. Sun, Science 287, 1989 (2000).
12. V. A. Shchukin and D. Bimberg, Rev. Mod. Phys. 71, 1125 (1999).
13. J. Stangl, V. Holy, and G. Bauer, Rev. Mod. Phys. 76, 725 (2004).
14. K. F. MacDonald, V. A. Fedotov, S. Pochon, et al., Appl. Phys. Lett. 80, 1643 (2002).
15. S. V. Vintsents, V. B. Zaitsev, A. V. Zoteev, et al., Fiz. Tekh. Poluprovodn. 36, 947 (2002) [Semiconductors 36, 841 (2002)].
16. S. V. Vintsents, A. V. Zaitseva, and G. S. Plotnikov, Fiz. Tekh. Poluprovodn. 37, 134 (2003) [Semiconductors 37, 124 (2003)].
17. A. A. Baidullaeva, M. B. Bulakh, A. I. Vlasenko, et al., Fiz. Tekh. Poluprovodn. 38, 29 (2004) [Semiconductors 38, 29 (2004)]; Fiz. Tekh. Poluprovodn. 39, 1064 (2005) [Semiconductors 39, 1028 (2005)].
18. F. Costache, S. Kouteva-Arguirova, and J. Reif, Appl. Phys. A 79 (2004).
19. S. V. Zabotnov, L. A. Golovan, I. A. Ostapenko, et al., Pis'ma Zh. Eksp. Teor. Fiz. 83, 76 (2006) [JETP Lett. 83, 69 (2006)].
20. S. Fascko, T. Dekorsy, C. Koerdt, et al., Science 285, 1551 (1999).
21. F. Frost, A. Schnider, and F. Bigl, Phys. Rev. Lett. 85, 4116 (2000).
22. R. Gago, L. Vasquez, R. Cuerno, et al., Appl. Phys. Lett. 78, 3316 (2001).
23. R. Gago, L. Vasquez, R. Cuerno, et al., Nanotechnology 13, 304 (2002).
24. H. Masuda, K. Yada, and A. Osaka, Jpn. J. Appl. Phys. 37, L1340 (1998).
25. S. Langa, V. Christophersen, J. Carstensen, et al., Phys. Status Solidi A 197, 77 (2003).
26. V. I. Emel'yanov and N. I. Koroteev, Usp. Fiz. Nauk 135, 345 (1981) [Sov. Phys. 24, 864 (1981)].
27. Tsing-Hua Her, R. J. Finlay, C. Wu, et al., Appl. Phys. Lett. 73, 1673 (1998).
28. C. Wu, C. H. Crouch, L. Zhao, et al., Appl. Phys. Lett. 78, 1850 (2001).
29. C. H. Crouch, J. E. Carey, J. M. Warrender, et al., Appl. Phys. Lett. 84, 1850 (2004).
30. D. Ashkenazi et al., J. Laser Micro/Nanoeng. 1(1), 12 (2006).
31. S. I. Dolgaev, S. V. Lavrishev, A. A. Lyalin, et al., Appl. Phys. Lett. 73, 177 (2001).
32. V. I. Emel'yanov, Laser Phys. 2, 389 (1992).
33. V. I. Emel'yanov, Quantum Electron. 29, 561 (1999).
34. V. I. Emel'yanov, Quantum Electron. 36(6), 489 (2006).
35. V. I. Emel'yanov, Microelectron. Eng. 69(2-4), 435 (2003).
36. V. I. Emel'yanov and A. I. Mikaberidze, Phys. Rev. B 72, 235407 (2005).
37. V. I. Emel'yanov and V. V. Starkov, Poverkhnost', No. 6, 116 (2006).
38. L. D. Landau and E. M. Lifshitz, Theory of Elasticity, 3rd ed. (Nauka, Moscow, 1987; Pergamon, Oxford, 1986).
39. S. P. Timoshenko and S. Woinowsky-Krieger, Theory of Plates and Shells, 2nd ed. (Nauka, Moscow, 1966; McGraw-Hill, New York, 1959).
40. V. I. Emel'yanov, V. B. Zaitsev, and G. S. Plotnikov, Poverkhnost', No. 11, 55 (2007).
41. H. G. van Bueren, Imperfections in Crystals, 2nd ed. (North-Holland, Amsterdam, 1960; Inostrannaya Literatura, Moscow, 1962).
42. V. F. Kiselev, S. N. Kozlov, and A. V. Zoteev, Fundamentals of Physics of Solid Surface (Mosk. Gos. Univ., Moscow, 1999), [in Russian].
43. V. I. Emel'yanov, A. Baidullaeva, A. I. Vlasenko, et al., Pis'ma Zh. Teck. Fiz. 32(16), 90 (2006) [Tech. Phys. Lett. 32, 732 (2006)].
44. K. Zanio and Cadmium Telluride, in Semiconductors and Semimetals, Ed. by R. K. Willardson and A. C. Beers (Academic, New York, 1977), Vol. 13, p. 4.
45. A. A. Kovalev, S. P. Rzhavyi, and G. L. Zykov, Fiz. Tekh. Poluprovodn. 39, 1345 (2005) [Semiconductors 39. 1229 (2005)].
46. D. Brewer, J. J. Zinck, and G. L. Olson, Appl. Phys. Lett. 57, 2526 (1990).
47. L. A. Golovan, B. A. Markov, P. K. Kashkarov, et al., Solid State Commun. 108, 707 (1998); Proc. SPIE 2801, 254 (1995).
48. R. O. Bell, Appl. Phys. 19, 313 (1979).
49. V. V. Godlevsky, J. J. Derby, and J. R. Chelikowsky, Phys. Rev. Lett. 1, 4959 (1998).
50. S. Preuss and M. Stuke, Appl. Phys. Lett. 67, 338 (1995).
51. S. Nolte, C. Momma, H. Jacobs, et al., Opt. Soc. Am. B 14, 2716, (1997).
52. W. Kautek and J. Kruger, Mater Sci. Forum 17, 173 (1995).
53. V. I. Emel'yanov and D. V. Babak, Appl. Phys. A 74, 797 (2002).
54. V. I. Emel'yanov and K. M. Karimov, Pis'ma Zh. Tekh. Fiz. 31, 84 (2005) [Tech. Phys. Lett. 31, 258 (2005)].
55. Landolt-Bornstein, Numerical Data and Functional Relationships in Science and Technology. New series. Group III, Vol. 17: Semiconductors, Subvol. A: Physics of Group IV Elements and III-V Compounds.
56. F. A. Modine and G. E. Jellison, Appl. Phys. Lett. 41, 180 (1982).
57. M. Lannoo and J. Bourgoin, Point Defects in Semiconductors I (Springer, New York, 1981).
58. Acoustic Crystals: Handbook (Nauka, GRFML, Moscow, 1982) [in Russian].
59. P. V. Kazakevich, A. V. Simakin, and G. A. Shafeev, Kvantovaya Elektron. 35(9), 831 (2005).
60. V. I. Emel'yanov, K. I. Eremin, V. V. Starkov, and E. Yu. Gavrilin, Pis'ma Zh. Tekh. Fiz. 29(6), 19 (2003) [Tech. Phys. Lett. 29, 226 (2003)].
61. R. S. Gvozdover, V. M. Efremenkova, L. B. Shelyakin, and V. E. Yurasova, Radiat. Eff. 27, 237 (1976).
62. S. Fascko, T. Dekorsy, C. Koerdt, et al., Science 285, 1551 (1999).
63. F. Frost, A. Schnider, and F. Bigl, Phys. Rev. Lett. 85, 4116 (2000).
64. R. Gago, L. Vasquez, R. Cuerno, et al., Appl. Phys. Lett. 78, 3316 (2001).
65. R. Gago, L. Vasquez, R. Cuerno, et al., Nanotecnology 13, 304 (2002).
66. S. Habenicht, W. Bolse, and K. Lieb, Phys. Rev. 60, R2200 (1999).
67. S. Rusponi, C. Boragno, and U. Valbuso, Phys. Rev. Lett. 78, 2795 (1997).
68. R. M. Bradly and J. M. Harper, J. Vac. Sci. Technol. A 6, 2390 (1988).
69. R. Cuerno and A. L. Barabasi, Phys. Rev. Lett. 74, 4746 (1995).
70. B. Kahng, H. Jeong, and A. L. Barabasi, Appl. Phys. Lett. 78, 805 (2001).
71. S. Habenicht, Phys. Rev. B 63, 125419 (2001).
72. G. J. Carter, Phys. D: Appl. Phys. 34, R1 (2001).
73. V. I. Emel'yanov, Izv. Ross. Akad. Nauk, Ser. Fiz. 7, 779 (2006).
74. V. E. Yurasova, Zh. Tekh. Fiz. 28, 1958 (1958) [Sov. Phys. Tech. Phys. 28, 1800 (1958)].
75. C. Hajdu, F. Paszti, I. Lovas, and M. Fried, Phys. Rev. B 41, 3929 (1990).
76. V. I. Emel'yanov, in Nonlinear Waves: Lectures at the Seventh All-Union School on Nonlinear Waves, Gorky, 1987 (Nauka, Moscow, 1989), p. 198.
77. V. I. Emel'yanov, "Instabilities and Phase Transitions with Formation of Ordered Surface Structures under the Action of External Energy Beams," in Proceedings of the International Symposium on Selected Topics in Statistical Mechanics, Joint Institute for Nuclear Research, Dubna, USSR, 1988, D17-88-95, p. 119.
78. D. Walgraef, Phys. Rev. B 56, 15361 (1997).