Performance gain through dynamic control of device geometry: Nanoelectromechanical carbon nanotube-based switch

IEEE Electron Device Letters

Volumn 27, Issue 12, 2006, Pages 988-991

  Engstrom K E ^a   Kinaret, Jari M ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

Carbon nanotubes (CNTs); CMOS devices; Field effect transistors (FETs); Nanoelectromechanical systems (NEMS); Nanorelay; Nanoswitch; Nanotechnology; Nanotransistor; Quantum tunneling; Subthreshold slope; Subthreshold swing

Indexed keywords

CARBON NANOTUBES; CMOS INTEGRATED CIRCUITS; ELECTRON TUNNELING; GAIN CONTROL; MOSFET DEVICES; QUANTUM ELECTRONICS;

DYNAMIC CONTROL; NANOSWITCH; NANOTRANSISTOR; QUANTUM TUNNELING; SUBTHRESHOLD SLOPE; SUBTHRESHOLD SWING;

NEMS;

EID: 33947194690     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2006.886707     Document Type: Article

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