1.8-V nanospeed R/W module for 64-kB cross-point cell magnetic random access memory

IEEE Transactions on Magnetics

Volumn 41, Issue 2, 2005, Pages 909-911

  Li, Simon C ^a   Lee, Jia Mou ^a   Su, J P ^a   Wu, Te Ho ^a  

^a NATIONAL YUNLIN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

Cross point (CP) magnetic random access memory (MRAM); Magnetoresistance ratio; Read write (R W) circuitry

Indexed keywords

AMPLIFIERS (ELECTRONIC); DATA REDUCTION; ELECTRIC RESISTANCE; NANOSTRUCTURED MATERIALS; NONVOLATILE STORAGE; SEMICONDUCTOR DEVICE MANUFACTURE; TUNNEL JUNCTIONS;

CROSS-POINT (CP) MAGNETIC RANDOM ACCESS MEMORY (MRAM); MAGNETIC TUNNEL JUNCTION (MTJ); MAGNETORESISTANCE RATIO; READ/WRITE (R/W) CIRCUITRY;

RANDOM ACCESS STORAGE;

EID: 14544275456     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMAG.2004.842090     Document Type: Article

References (6)

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