Crystallization kinetics of hydrogenated amorphous silicon thick films grown by plasma-enhanced chemical vapour deposition

Applied Surface Science

Volumn 238, Issue 1-4 SPEC. ISS., 2004, Pages 165-168

  Farjas, J ^a   Rath, Chandana ^a   Roura, P ^a   Roca I Cabarrocas, P ^b  

^a Campus Montilivi   (Spain)

^b LABORATOIRE DE PHYSIQUE DES INTERFACES ET DES COUCHES MINCES   (France)

Author keywords

Amorphous silicon; Crystallization kinetics; DSC

Indexed keywords

CALORIMETRY; CRYSTALLIZATION; HYDROGENATION; ISOTHERMS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; THICK FILMS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

CRYSTALLIZATION KINETICS; KINETIC PARAMETERS; TEMPERATURE RANGE; THREE-DIMENSIONAL GROWTH;

AMORPHOUS SILICON;

EID: 4644247198     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.05.200     Document Type: Conference Paper

References (17)

1. Street R.A., Apte R.B., Ready S.E., Weisfield R.L., Nylen P. Mater. Res. Soc. Proc. 487:1998;399.
2. L.L. Kazmerski, Polysilicon and Amorphous Thin Film Devices, Academic Press, New York, 1980.
3. T.I. Kamins, Polycrystalline Silicon for Integrated Circuit Applications, Kluwer Academic Publishers, Boston, 1988.
4. Hatalis M.K., Greve D.W. J. Appl. Phys. 63:1988;2260.
5. Spinella C., Lombardo S., Priolo F. J. Appl. Phys. 84:1998;5383.
6. Iverson R.B., Reif R. J. Appl. Phys. 62:1987;1675.
7. Nakazawa K., Tanaka K. J. Appl. Phys. 68:1990;1029.
8. Masaki Y., Le Comber P.G., Fitzerald A.G. J. Appl. Phys. 74:1993;129.
9. Zellama K., Germain P., Bourgoin J.C. J. Appl. Phys. 50:1979;6995.
10. Bisaro R., Magariño J., Pastol Y., Germain P., Zellama K. Phys. Rev. B. 40:1989;7655.
11. Donovan E.P., Spaepen F., Turnbull D., Poate J.M., Jacobson D.C. Appl. Phys. Lett. 42:1983;698.
12. Donovan E.P., Spaepen F., Poate J.M., Jacobson D.C. Appl. Phys. Lett. 55:1989;1516.
13. Avrami M. J. Chem. Phys. 9:1941;177.
14. Henderson D.E. J. Non-Crys. Sol. 30:1979;301-315.
15. Roorda S., Doorn S., Sinke W.C., Scholte P.M.L.O., van Loenen E. Phys. Rev. Lett. 62:1989;1880.
16. Bo X.-Z., Yao N., Shieh S.R., Duffy T.S., Sturm J.C. J. Appl. Phys. 91:2002;2910.
17. C. Rath, J. Farjas, P. Roura, F. Kail, P. Roca i Cabarrocas, E. Bertran, Colorimetry studies of polymorphous silicon J. Non-Cris. Sol., submitted for publication.