Solid phase crystallization of hot-wire CVD amorphous silicon films

Materials Research Society Symposium Proceedings

Volumn 862, Issue , 2005, Pages 233-238

  Young, David L ^a   Stradins, Paul ^a   Iwaniczko, Eugene ^a   To, Bobby ^a   Reedy, Bob ^a   Yan, Yanfa ^a   Branz, Howard M ^a   Lohr, John ^c   Alvarez, Manuel ^b   Booske, John ^b   Marconnet, Amy ^b   Wang, Qi ^b  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^b University of Wisconsin Madison   (United States)

^c GENERAL ATOMICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; CRYSTALLIZATION; HYDROGENATION; MAGNETOELECTRIC EFFECTS; RAPID THERMAL ANNEALING;

SOLID PHASE CRYSTALLIZATION (SPC); TUBE FURNACES; TUNGSTEN-HALOGEN LAMPS;

AMORPHOUS SILICON;

EID: 30644459421     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-862-a10.5     Document Type: Conference Paper

References (14)

1. M. A. Green, P. A. Basore, N. Chang, D. Clugston, R. Egan, R. Evans, D. Hogg, S. Jarnason, M. Keevers, P. Lasswell, J. O'Sullivan, U. Schubert, A. Turner, S. R. Wenham, and T. Young, Crystalline silicon on glass (CSG) thin-film solar cell modules. Solar Energy Materials and Solar Cells 77, 857 (2004).
2. K. Pangal, J. C. Sturm, and S. Wagner, Integrated amorphous and polycrystalline silicon thin-film transistors in a single silicon layer. IEEE Transactions on Electron Devices 48, 707 (2001).
3. A. H. Mahan, Y. Xu, D. L. Williamson, W. Beyer, J. D. Perkins, M. Vanecek, L. M. Gedvilas, and B. P. Nelson, Structural properties of hot wire a-Si:H films deposited at rates in excess of 100 Å/s. Journal of Applied Physics 90, 5038 (2001).
4. B. P. Nelson, Y. Xu, A. H. Mahan, D.L. Williamson, and R. S. Crandall, in Spring MRS, San Francisco, 2000).
5. P. Stradins, D. L. Young, H. M. Branz, and Q. Wang, Spr. MRS A16.1, San Francisco, CA, (2005).
6. D. L. Young, T. J. Coutts, and V. I. Kaydanov, Density-of-States Effective Mass and Scattering Parameter Measurements by Transport Phenomena in Thin Films. Review of Scientific Instruments 71, 462 (2000).
7. B. Roy, RTA of a-Si films. Poster 19.5, MRS 2005 (2005).
8. R. Morimoto, A. Izumi, A. Masuda, and H. Matsumura, Low-resistivity phosphorous-doped polycrystalline silicon thin films formed by catalytic chemical vapor deposition and successive rapid thermal annealing. Jpn. J. Appl. Phys. 41, 501 (2002).
9. S. S. Li, Semiconductor Physical Electronics (Plenum, New York, 1993).
10. Y. Masaki, P. G. LeComber, and A. G. Fitzgerald, Solid phase crystallization of thin films of Si prepared by plasma-enhanced chemical vapor deposition. J. Appl. Phys. 74, 129 (1993).
11. A. H. Mahan, D. L. Williamson, and T. E. Furtak, in MRS, edited by S. Wagner, M. Hack, E. A. Schiff, R. Schropp and I. Shimizu (MRS, San Francisco, CA, 1997), Vol. 467, p. 657.
12. J. Baugh, D. Han, A. Kleinhamrnes, C. Liu, Y. Wu, and Q. Wang, Microstructure and dynamics of hydrogen in a-Si:H detected by nuclear magnetic resonance. Journal of Non-Crystalline Solids 266-269, 185 (2000).
13. K. Thompson, Y. B. Gianchandani, J. Booske, and R. F. Cooper, Direct Silicon-Silicon bonding by electromagnetic induction heating. Journal of Microelectromechanical Systems 11, 285 (2002).
14. K. Thompson, J. H. Booske, R. L. Ives, J. Lohr, Y. Gorelov, and K. Kajiwara, University of Wisconsin private comunication (2002).