SCOPUS 정보 검색 플랫폼

Volumn 24, Issue 1, 2008, Pages 28-35

Structural properties and electrical resistivity of TiNx and Ti1-xAlxN films prepared by reactive dc magnetron sputtering: Effect of nitrogen flowrate

(3) Irudayaraj, A A a Kuppusami, P b Kalainathan, S c

a SACRED HEART COLLEGE (India)

b INDIRA GANDHI CENTRE FOR ATOMIC RESEARCH (India)

c VIT UNIVERSITY (India)

Author keywords

Auger electron spectroscopy; Preferred orientation; Resistivity; Sputtering; Titanium aluminium nitride; Titanium nitride

Indexed keywords

ELECTRIC CONDUCTIVITY; MAGNETRON SPUTTERING; NITROGEN COMPOUNDS; TITANIUM NITRIDE;

NITROGEN FLOWRATE; PREFERRED ORIENTATION; STRUCTURAL CHANGES;

THIN FILMS;

EID: 44649123694 PISSN: 02670844 EISSN: None Source Type: Journal
DOI: 10.1179/174329408X271552 Document Type: Article

Times cited : (14)

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