Influence of nitrogen flow rate on growth of TiAlN films prepared by DC magnetron sputtering

Surface Engineering

Volumn 23, Issue 1, 2007, Pages 7-11

  Irudayaraj, A A ^a   Kuppusami, P ^b   Thirumurugesan, R ^b   Mohandas, E ^b   Kalainathan, S ^b   Raghunathan, V S ^b  

^a VIT UNIVERSITY   (India)

^b INDIRA GANDHI CENTRE FOR ATOMIC RESEARCH   (India)

Author keywords

Crystal structure; Deposition rate; Hardness; Microstructure; Reactive sputtering; Resistivity; Thin film; TiAlN

Indexed keywords

CRYSTAL STRUCTURE; DEPOSITION RATES; FLOW RATE; GRAIN SIZE AND SHAPE; HARDNESS; MAGNETRON SPUTTERING; MICROSTRUCTURE; NITROGEN; REACTIVE SPUTTERING; SILICON; SINGLE CRYSTALS;

DC MAGNETRON SPUTTERING; RATE OF DEPOSITION; SINGLE CRYSTAL SUBSTRATES; TIALN FILMS;

THIN FILMS;

EID: 35349004738     PISSN: 02670844     EISSN: None     Source Type: Journal    
DOI: 10.1179/174329407X161627     Document Type: Article

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