Using carbon nanotubes to enhance creep performance of lead free solder

Materials Science and Technology

Volumn 24, Issue 4, 2008, Pages 443-448

  Nai, S M L ^a   Wei, J ^b   Gupta, M ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b SINGAPORE INSTITUTE OF MANUFACTURING TECHNOLOGY   (Singapore)

Author keywords

Carbon nanotubes; Composites; Creep test; Lead free solder

Indexed keywords

CHEMICAL ACTIVATION; CREEP RESISTANCE; CREEP TESTING; SOLDERING ALLOYS; THERMAL STRESS;

CREEP PERFORMANCE; LEAD FREE SOLDERS; TESTING TEMPERATURE;

MULTIWALLED CARBON NANOTUBES (MWCN);

EID: 44449087326     PISSN: 02670836     EISSN: None     Source Type: Journal    
DOI: 10.1179/174328408X282155     Document Type: Article

References (43)

1. M. Abtew and G. Selvaduray: Mater. Sci. Eng. R, 2000. R27, (5-6), 95-141.
2. W. Gibson, S. Choi, T. R. Bieler and K. N. Subramanian: Proc. IEEE Int. Symp. on 'Electronics and the environment', San Francisco, CA, USA, May 1997, IEEE, 246-251.
3. J. W. Morris, J. F. Goldstein and Z. Mei: in 'The mechanics of solder alloy interconnects', (ed. D. Frear et al.), 7-40; 1994, New York, ITP.
4. J. H. Lau, W. Nakayama, J. Prince and C. P. Wong: 'Electronic packaging: design, materials, process and reliability'; 1998, New York, McGraw Hill.
5. G. Elger, M. Hutter, H. Oppermann, R. Aschenbrenner, H. Reichl H and E. Jaeger: Microsys. Technol., 2002, 7, 239-243.
6. Y. W. Shi: China-European Union Workshop on 'Materials strategy for new millennium', Beijing, China, December 2000, 39.
7. H. G. Song, J. W. Morris and F. Hua: Mater. Trans., 2002, 43, (8), 1847-1853.
8. W. J. Plumbridge, C. R. Gagg and S. Peters: J. Electron. Mater., 2001, 54, (6), 1178-1183.
9. S. Kikuchi, M. Nishimura, K. Suetsugu, T. Ikari and K. Matsushige: Mater. Sci. Eng. A, 2001, A54, (6), 475-479.
10. H. Mavoori and S. Jin: Appl. Phys. Lett., 1998, 73, (16), 2290-2292.
11. D. C. Lin, G. X. Wang, T. S. Srivatsan, M. Al-Hajri and M. Petraroli: Mater. Lett., 2003, 57, (21), 3193-3198.
12. S. Iijima: Nature, 1991, 354, 56-58.
13. M. F. Yu, B. S. Files, S. Arepalli and R. S. Ruoff: Phys. Rev. Lett., 2000, 84, 5552-5557.
14. H. Dai: Surf. Sci., 2002, 500, 218-241.
15. A. K. Lau and D. Hui: Compos. Part B: Eng. 2002. 33B. 263-277.
16. R. B. Pipes and P. Hubert: Compos. Sci. Technol., 2002, 62, 419-428.
17. J. S. Delmotee and A. Rubio: Carbon, 2002, 40, 1729-1734.
18. L. Valentini, J. Biagiotti, J. M. Kenny and S. Santucci: Compos. Sci. Technol., 2003, 63, 1149-1153.
19. C. Balazsi, Z. Shen, Z. Konya, Z. Kasztovszky, F. Weber, Z. Vertesy, L. P. Biro, I. Kiricsi and P. Arato: Compos. Sci. Technol., 2005, 65, (5), 727-733.
20. A. A. Mamedov, N. A. Kotov, M. Prato, D. M. Guldi, J. P. Wicksted and A. Hirsch: Nat. Mater., 2002, 1, 190-194.
21. S. I. Cha, K. T. Kim, S. N. Arshad, C. B. Mo and S. H. Hong: Adv. Mater., 2005, 17, 1377-1381.
22. S. M. L. Nai, J. Wei and M. Gupta: J. Electron. Mater., 2006, 35, (7), 1518-1522.
23. Z. G. Chen, Y. W. Shi and Z. D. Xia: J. Electron. Mater., 2004, 33, (9), 964-971.
24. D. R. Askeland: 'The science and engineering of materials', 174; 1996, London, Chapman & Hall.
25. F. G. Yost, F. M. Hosking and D. R. Frear: 'The mechanics of solder alloy wetting and spreading'; 1993, New York, van Nostrand Reinhold.
26. F. Guo, J. Lee, J. P. Lucas, K. N. Subramanian and T. R. Bieler: J. Electron. Mater., 2001, 30, (9), 1222-1227.
27. J. E. Bird, A. K. Mukherjee and J. E. Dorn: 'Quantitative relation, between, properties and microstructure', 225; 1969, Israel, Israel University Press.
28. Y. H. Pao, S. J. E. Badgley, R. Govila and J. Browning: J. Electron. Packag., 1993, 115, 147-152.
29. Z. Guo, Y. H. Pao and H. Conrad: J. Electron. Packag., 1995, 117, 100-104.
30. X. Q. Shi, Z. P. Wang, W. Zhou, H. J. L. Pang and Q. J. Yang: J. Electron. Packag., 2002, 124, 85-90.
31. M. Kerr and N. Chawla: Acta Mater., 2004, 52, 4527-4535.
32. M. L. Huang, C. M. L. Wu and L. Wang: J. Electron. Mater., 2005, 34, (11), 1373-1377.
33. M. L. Huang, L. Wang and C. M. L. Wu: J. Mater. Res., 2002, 17, (11), 2897-2903.
34. C. M. L. Wu and M. L. Huang: J. Electron. Mater., 2002, 31, (5), 442-448.
35. P. Adeva, G. Caruanan, O. A. Ruano and M. Torralba: Mater. Sci. Eng. A, 1995, A194, 17-23.
36. F. A. Mohamed, K. L. Murty and J. W. Morris: Metall. Trans., 1973, 4, 935-940.
37. Q. Xiao, L. Nguyen and W. D. Armstrong: Proc. Electron. Compon. Technol. Conf., Las Vegas, NV, USA, June 2004, IEEE, 1325-1332.
38. J. Glazer: Int. Mater. Rev., 1995, 40, 65-93.
39. S. Wiese and K. J. Wolter: Microelectron. Reliabtl., 2004, 44, 1923-1931.
40. J. J. Sudelin, S. T. Nurmi, T. K. Lepisto and E. O. Ristolainen: Solder. Surf. Mount Technol., 2005, 17, (4), 3-9.
41. V. I. Igoshev and J. I. Kleiman: J. Electron. Mater., 2000, 29, (2), 244-250.
42. S. M. L. Nai, J. Wei and M. Gupta: Mater. Sci. Eng. A, 2006, A423, (1-2) 166.
43. S. M. L. Nai, J. Wei and M. Gupta: Proc. ASME Int. Mech. Eng. Cong. Exposit., Seattle, WA, USA, November 2007, ASME, Paper IMECE2007-41762, pp. 1-4.