Study on extremely thin base SiGe:C HBTs featuring sub 5-ps ECL gate delay

Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting

Volumn , Issue , 2003, Pages 107-110

  Tominari, Tatsuya ^a   Wada, Shinichro ^a   Tokunaga, Kazuaki ^a   Koyu, Kaoru ^a   Kubo, Maki ^a   Udo, Tsutomu ^a   Seto, Motoshi ^a   Ohhata, Kenichi ^a   Hosoe, Hideyuki ^a   Kiyota, Yukihiro ^a,b   Washio, Katsuyoshi ^a   Hashimoto, Takashi ^a  

^a HITACHI LTD   (Japan)

^b SONY CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; ETCHING; GATES (TRANSISTOR); POLYSILICON; SEMICONDUCTING BORON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; TRANSMISSION ELECTRON MICROSCOPY;

GATE DELAY; LOW PRESSURE CHEMICAL VAPOR DEPOSITION; SELECTIVE EPITAXIAL GROWTH; SEMICONDUCTING SILICON GERMANIDE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 1042266053     PISSN: 10889299     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/bipol.2003.1274946     Document Type: Conference Paper

References (8)

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7. Y. Kiyota, T. Udo, T. Hashimoto, A. Kodama, H. Shimamoto, R. Hayami, E. Ohue, and K. Washio, "HCl-Free Selective Epitaxial Si-Ge Growth by LPCVD for High-Frequency HBTs", IEEE Trans. Electron Devices, pp. 739-745, May 2002
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