High performance SiGeC HBT integrated into a 0.25μm BiCMOS technology featuring record 88% power-added efficiency

IEEE MTT-S International Microwave Symposium Digest

Volumn 2, Issue , 2004, Pages 979-982

  Hartskeerl, D M H ^a   Huizing, H G A ^a   Deixler, P ^b   Van Noort, W ^a   Magnee P H C ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

^b NXP SEMICONDUCTORS   (Netherlands)

Author keywords

Bipolar power transistor; Rf technology; SiGeC heterojunction bipolar transistor

Indexed keywords

BIPOLAR POWER TRANSMISSION; RF TECHNOLOGY; SIGEC HETEROJUNCTION BIPOLAR TRANSISTORS; SUPPLY VOLTAGES;

CMOS INTEGRATED CIRCUITS; HEAT RESISTANCE; OSCILLATIONS; POWER TRANSMISSION; ROBUSTNESS (CONTROL SYSTEMS); SEMICONDUCTING GALLIUM ARSENIDE; SILICON COMPOUNDS; SUBSTRATES;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 4444331461     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (14)

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