Large-signal modeling and characterization of high-current effects in InGaP/GaAs HBTs

IEEE Transactions on Microwave Theory and Techniques

Volumn 50, Issue 4, 2002, Pages 1084-1094

  Shirokov, Mikhail S ^b   Cherepko, Sergey V ^c   Du, Xiaohang ^a,d   Hwang, James C M ^a,c   Teeter, Douglas A ^a,b,e  

^a IEEE

^b Advanced Device Center   (United States)

^c Lehigh University   (United States)

^d RF MICRO DEVICES   (United States)

^e Boston Design Center   (United States)

Author keywords

Charge carrier injection; Charge carrier lifetime; Charge carrier processes; Heterojunction bipolar transistors; Microwave devices; Microwave power amplifiers; Semiconductor heterojunction

Indexed keywords

BASE-COLLECTOR DIFFUSION CAPACITANCE; CHARGE CARRIER INJECTION; CHARGE CARRIER LIFETIME; GALLIUM ARSENIDE TRANSISTORS; GUMMEL-POON MODEL; HIGH CURRENT EFFECTS; INDIUM GALLIUM PHOSPHIDE TRANSISTORS; KIRK EFFECT; LARGE SIGNAL MODELING; SELF HEATING EFFECT;

CAPACITANCE MEASUREMENT; CARRIER CONCENTRATION; CARRIER MOBILITY; CHARGE CARRIERS; ELECTRIC CURRENT MEASUREMENT; GEOMETRY; HETEROJUNCTION BIPOLAR TRANSISTORS; MATHEMATICAL MODELS; MICROWAVE AMPLIFIERS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MODELS;

MICROWAVE DEVICES;

EID: 0036539407     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/22.993410     Document Type: Article

References (20)

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17. Current gain and cutoff frequency falloff at high currents
18. Physics-based minority charge and transit time modeling for bipolar transistors