SiGe BiCMOS technologies for power amplifier applications

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Volumn , Issue , 2003, Pages 179-182

  Johnson, Jeffrey B ^a   Joseph, Alvin J ^a   Sheridan, David ^a   Malladi, Ramana M ^a  

^a IBM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; EPITAXIAL GROWTH; HETEROJUNCTION BIPOLAR TRANSISTORS; INTEGRATED CIRCUIT LAYOUT; OPTIMIZATION; POWER AMPLIFIERS; SEMICONDUCTING SILICON COMPOUNDS; SILICON ON INSULATOR TECHNOLOGY; WIRELESS TELECOMMUNICATION SYSTEMS;

SAFE OPERATING AREA ANALYSIS; SEMICONDUCTING SILICON GERMANIUM; VOLTAGE STANDING WAVE RATION; WIRELESS POWER AMPLIFIERS;

CMOS INTEGRATED CIRCUITS;

EID: 0348195874     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/gaas.2003.1252389     Document Type: Conference Paper

References (11)

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11. Weitzel, C. E., "RF Power Amplifiers for Wireless Communications," Tech. Digest GaAs IC Symp, pp. 127-130, 2002.