A 50% efficiency InGaP/GaAs HBT power amplifier module for 1.95 GHz Wide-Band CDMA handsets

IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers

Volumn , Issue , 2001, Pages 31-34

  Nishimura, T B ^a   Tanomura, M ^a   Azuma, K ^a   Nakai, K ^a   Hasegawa, Y ^a   Shimawaki, H ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BROADBAND AMPLIFIERS; CODE DIVISION MULTIPLE ACCESS; ELECTRIC FREQUENCY MEASUREMENT; ELECTRIC POWER SUPPLIES TO APPARATUS; GAIN CONTROL; HETEROJUNCTION BIPOLAR TRANSISTORS; MULTICHIP MODULES; POWER AMPLIFIERS; POWER CONTROL; SEMICONDUCTING INDIUM COMPOUNDS; TELEPHONE SETS;

ADJACENT CHANNEL LEAKAGE POWER RATIO; GALLIUM ARSENIDE TRANSISTORS; INDIUM GALLIUM PHOSPHIDE TRANSISTORS; OFF CENTER FREQUENCY BAND; POWER ADDED EFFICIENCY; POWER AMPLIFIER MODULE; WIDEBAND HANDSETS;

INTEGRATED CIRCUIT LAYOUT;

EID: 0034867309     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. 0.2 cc HBT power amplifier module with 40% power-added efficiency for 1.95GHz wide-band CDMA cellular phones
2. High efficiency power amplifier module with novel enhancement-mode heterojunction FETs for wide-band CDMA handsets
3. 0.1 cc 60% efficiency power amplifier multi-chip modules for personal digital cellular phones
4. Wide-band CDMA highly-efficient heterojunction FET over wide range output power with DC-DC converter