Influence of interface traps and surface mobility degradation on scanning capacitance microscopy measurement

IEEE Transactions on Electron Devices

Volumn 51, Issue 9, 2004, Pages 1496-1503

  Hong, Yang David ^a   Yeow, Yew Tong ^a   Chim, Wai Kin ^b   Wong, Kin Mun ^b   Kopanski, Joseph J ^c  

^a UNIVERSITY OF QUEENSLAND   (Australia)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^c NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DOPANT PROFILE EXTRACTION; INTERFACE TRAPS; SCANNING CAPACITANCE MICROSCOPY; SURFACE MOBILITY;

CAPACITANCE MEASUREMENT; COMPUTER SIMULATION; DEGRADATION; ELECTRON MOBILITY; ELECTRON TRAPS; INTERFACES (MATERIALS); MICROSCOPIC EXAMINATION; OXIDES; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING;

MOS CAPACITORS;

EID: 4444306104     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2004.833590     Document Type: Article

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