Lithium ion irradiation effects on epitaxial silicon detectors

IEEE Transactions on Nuclear Science

Volumn 51, Issue 4 I, 2004, Pages 1766-1772

  Candelori, Andrea ^a   Schramm, Andreas ^b   Bisello, Dario ^a   Contarato, Devis ^b   Fretwurst, Eckhart ^b   Lindström, Gunnar ^b   Rando, Riccardo ^a   Wyss, Jeff ^c,d  

^a UNIVERSITY OF PADOVA   (Italy)

^b UNIVERSITY OF HAMBURG   (Germany)

^c UNIVERSITY OF CASSINO AND SOUTHERN LAZIO   (Italy)

^d INFN SEZIONE DI PISA   (Italy)

Author keywords

Diodes; Epitaxial layers; Ion irradiation effects; Radiation detectors

Indexed keywords

CHARGE COLLECTION PROPERTIES; EPITAXIAL LAYERS; SILICON DETECTORS;

ANNEALING; CHARGE TRANSFER; COLLIDING BEAM ACCELERATORS; EPITAXIAL GROWTH; ION BOMBARDMENT; ION IMPLANTATION; RADIATION DETECTORS; SEMICONDUCTOR DIODES;

RADIATION EFFECTS;

EID: 4444270292     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2004.832702     Document Type: Conference Paper

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