Radiation hardness of silicon detectors manufactured on wafers from various sources

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 388, Issue 3, 1997, Pages 314-317

  Dezillie, B ^a   Bates, S ^a   Glaser, M ^a   Lemeilleur, F ^a   Leroy, C ^b  

^a CERN   (Switzerland)

^b UNIVERSITÉ DE MONTRÉAL   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

IRRADIATION; LEAKAGE CURRENTS; MANUFACTURE; PROTONS; RADIATION HARDENING; SILICON;

CHARGE COLLECTION EFFICIENCY; DEPLETION VOLTAGE; FLUENCE; PROTON IRRADIATION; RADIATION HARDNESS; SILICON DETECTORS; WAFERS;

RADIATION DETECTORS;

EID: 0031120136     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(97)00005-3     Document Type: Article

References (4)

1. F. Lemeilleur et al., Nucl. Phys. B (Proc. Suppl.) 32 (1993) 415.
2. E. Fretwurst et al., Nucl. Instr. and Meth. A 326 (1993) 357.
3. S.J. Bates et al., Proton irradiation of silicon detectors with different resistivities. CERN/ECP 95-18; Proc. III European Symp. RADiations and their Effects on Components and Systems, Arcachon, France, September 1995, to appear.
4. C. Leroy et al., Proc. IV Int. Conf. on Calorimetry in High Energy Physics, La Biodola, Isola d'Elba, Italy, eds. A. Menzione and A. Scribano (World Scientific, Singapore, 1994) p. 627.