Investigation of epitaxial silicon layers as a material for radiation hardened silicon detectors1

IEEE Transactions on Nuclear Science

Volumn 45, Issue 3 PART 1, 1998, Pages 585-590

  Li, Z ^a   Eremin, V ^a   Ilyashenko, ^a   Ivanov, A ^a   Verbitskaya, E ^a  

^a BROOKHAVEN NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; EPITAXIAL GROWTH; IRRADIATION; NEUTRONS; PROTONS; RADIATION DAMAGE; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON;

NEUTRON FLUENCES; RADIATION HARDNESS; SILICON DETECTORS;

RADIATION DETECTORS;

EID: 0032098093     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.682453     Document Type: Article

References (12)

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