Characterization of GaN nanowires and light-emitting devices based on a GaN nanowire-PVK nanocomposite

Synthetic Metals

Volumn 135-136, Issue , 2003, Pages 743-744

  Kim, M ^a   Jeon, B H ^a   Kim, J Y ^a   Choi, J H ^a  

^a Korea University   (South Korea)

Author keywords

Alq3; Electroluminescence; GaN nanowire; Light emitting device; Photoluminescence; Polyvinylcarbazole

Indexed keywords

COATED MATERIALS; DOPING (ADDITIVES); ELECTROLUMINESCENCE; ENERGY DISPERSIVE SPECTROSCOPY; GALLIUM NITRIDE; LASER ABLATION; LIGHT EMITTING DIODES; LUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SINGLE CRYSTALS; TRANSMISSION ELECTRON MICROSCOPY;

ALQ3; FLOW RATE; GAN NANOWIRE; POLYVINYLCARBAZOLE;

NANOSTRUCTURED MATERIALS;

EID: 4944258534     PISSN: 03796779     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0379-6779(02)00828-7     Document Type: Conference Paper

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