Thermal annealing effects on morphology and electrical response in ultrathin film organic transistors

Synthetic Metals

Volumn 146, Issue 3, 2004, Pages 373-376

  Dinelli, F ^a   Murgia, M ^a   Biscarini, F ^b   De Leeuw, D M ^b  

^a CNR   (Italy)

^b PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

Hexamethyldisilazane; Organic field effect transistors; Organic molecular beam deposition

Indexed keywords

ANNEALING; DEPOSITION; DESORPTION; DOPING (ADDITIVES); ELECTRIC CHARGE; ELECTRODES; HYSTERESIS; OHMIC CONTACTS; RECRYSTALLIZATION (METALLURGY); VACUUM;

ELECTRICAL RESPONSE; HEXAMETHYLDISILAZANE; ORGANIC FIELD EFFECT TRANSISTORS; ORGANIC MOLECULAR BEAM DEPOSITION;

THIN FILM TRANSISTORS;

EID: 9344239927     PISSN: 03796779     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.synthmet.2004.08.016     Document Type: Conference Paper

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