Thermal annealing effects on a compositionally graded SiGe layer fabricated by oxidizing a strained SiGe layer

Applied Surface Science

Volumn 254, Issue 17, 2008, Pages 5363-5366

  Cai, Kunhuang ^a   Li, Cheng ^a   Zhang, Yong ^a   Xu, Jianfang ^a   Lai, Hongkai ^a   Chen, Songyan ^a  

^a XIAMEN UNIVERSITY   (China)

Author keywords

Si Ge intermixing; SiGe; Strain relaxation; Thermal annealing

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; DISLOCATIONS (CRYSTALS); RAMAN SPECTROSCOPY; SILICON ALLOYS; STRAIN RELAXATION; SURFACE ROUGHNESS; X RAY DIFFRACTION;

SI-GE INTERMIXING; SURFACE UNDULATION;

BUFFER LAYERS;

EID: 43849112523     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.02.075     Document Type: Article

References (20)

1. F. Schaffler Semicond. Sci. Technol. 12 1997 1515
2. L.L. Minjoo A.F. Eugene T.B Mayank M.T. Currie A. Lochtefeld J. Appl. Phys. 97 2005 011101
3. L. Colace G. Masini G. Assanto IEEE J. Quantum Electron. 35 1999 1843
4. E.A. Fitzgerald Y.H. Xie M.L. Green D. Brasen A.R. Kortan J. Michel Y.J. Mii B.E. Weir Appl. Phys. Lett. 59 1991 811
5. K.K. Linder F.C. Zhang J.S. Rieh P. Bhattacharya D. Houghton Appl. Phys. Lett. 70 1997 3224
6. V. Terzieva L. Souriau F. Clemente A. Benedetti M. Caymax M. Meuris Mater. Sci. Semicond. Process. 9 2006 449
7. J.P. Liu L.H. Wong D.K. Sohn L.C. Hsia L. Chan C.C. Wong H.J. Osten Electrochem. Solid-State Lett. 8 2005 G60
8. M.T. Currie S.B. Samavedam T.A. Langdo C.W. Leitz E.A. Fitzgerald Appl. Phys. Lett. 72 1998 1718
9. T. Tezuka N. Sugiyama S.I. Takagi T. Kawakubo Appl. Phys. Lett. 80 2002 3560
10. B.-G. Min Y.H. Pae K.S. Jun D.-H. Ko H. Kim M.-H. Cho T.W. Lee J. Appl. Phys. 100 2006 016102
11. M.L. Green B.E. Weir D. Brasen Y.F. Hsieh G. Higashi A. Feygenson L.C. Feldman R.L. Headrick J. Appl. Phys. 69 1991 745
12. S.B. Samavedam E.A. Fitzgerald J. Appl. Phys. 81 1997 3108
13. S.S. Iyer F.K. LeGoues J. Appl. Phys. 65 1989 4693
14. T. Tezuka Y. Moriyama S. Nakaharai N. Sugiyama N. Hirashita E. Toyoda Y. Miyamura S. Takagi Thin Solid Films 508 2006 251
15. W. Huang H. Cheng G. Sun R. Lou J. Yeh T. Shen Appl. Phys. Lett. 91 2007 142102
16. F. Secco D’Aragona J. Electrochem. Soc. 119 1972 948
17. J.C. Tsang P.M. Mooney F. Dacol J.O. Chu J. Appl. Phys. 75 1994 8098
18. P.M. Mooney F.H. Docol J.C. Tsang J.O. Chu Appl. Phys. Lett. 62 1993 2069
19. T.S. Perova K. Lyutovich D. Potapova C.P. Parrry E. Kasper R.A. Moore ASDAM 2002 2002 Smolenice Castle Slovakia p. 14
20. S. Hong H.W. Kim D.K. Bae S.C. Song G.D. Lee Appl. Phys. Lett. 88 2006 122103