A novel thin buffer concept for epitaxial growth of relaxed SiGe layers with low threading dislocation density

Electrochemical and Solid-State Letters

Volumn 8, Issue 2, 2005, Pages

  Liu, J P ^a   Wong, L H ^b   Sohn, D K ^a   Hsia, L C ^a   Chan, L ^a   Wong, C C ^b   Osten, H J ^c  

^a CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^c LEIBNIZ UNIVERSITY HANNOVER   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION GRADIENT; ROOT MEAN SQUARE (RMS); THIN BUFFER; THREADING;

ATOMIC FORCE MICROSCOPY; AUGER ELECTRON SPECTROSCOPY; CHEMICAL REACTORS; CHEMICAL VAPOR DEPOSITION; DISLOCATIONS (CRYSTALS); SILICON COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

EPITAXIAL GROWTH;

EID: 13444259443     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1848295     Document Type: Article

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