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Volumn 254, Issue 17, 2008, Pages 5319-5322

Study of structural and electronic environments of hydrogenated amorphous silicon carbonitride (a-SiCN:H) films deposited by hot wire chemical vapor deposition

(2) Swain, Bibhu P a Hwang, Nong M a

a Seoul National University (South Korea)

Author keywords

a SiCN:H; Raman spectroscopy; XPS

Indexed keywords

AMORPHOUS SILICON; CARBON NITRIDE; CHEMICAL BONDS; CHEMICAL VAPOR DEPOSITION; RAMAN SPECTROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

AMORPHOUS SILICON CARBONITRIDE (A-SICN:H); ELECTRONIC ENVIRONMENTS; HOT WIRE CHEMICAL VAPOR DEPOSITION (HWCVD); PRECURSOR GAS;

THIN FILMS;

EID: 43849102034 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/j.apsusc.2008.02.077 Document Type: Article

Times cited : (64)

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