Fabrication of thick germanium-on-insulator (GeOI) substrates

Journal of Electronic Materials

Volumn 37, Issue 7, 2008, Pages 944-950

  Balakumar, S ^a   Hoe, K M ^a   Lo, G Q ^a   Kumar, R ^a   Balasubramanian, N ^a   Foo, Y L ^b   Tripathy, S ^b   Kwong, D L ^a  

^a INSTITUTE OF MICROELECTRONICS   (Singapore)

^b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

GeOI; Raman; Substrate; X ray

Indexed keywords

PHONONS; SEMICONDUCTOR INSULATOR BOUNDARIES; SILICON ON INSULATOR TECHNOLOGY; TRANSMISSION ELECTRON MICROSCOPY;

MICRO-RAMAN MEASUREMENTS; THICKNESS VARIATIONS;

GERMANIUM;

EID: 43749115957     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-008-0413-8     Document Type: Article

References (25)

1. 1. M.L. Lee E.A. Fitzgerald M.T. Bulsara M.T. Currie A. Lochtefeld 2005 J. Appl. Phys. 97 011101 10.1063/1.1819976 M.L. Lee, E.A. Fitzgerald, M.T. Bulsara, M.T. Currie, A. Lochtefeld, J. Appl. Phys. 97, 011101 (2005)
2. 2. J.M. Fedeli, J.F. Dam lencourb, L.E. Melhaoui, Y.L. Cunff, V. Mazzochi, L. Viveh, D.M. Morini, M. Rouviere, D. Pascal, X.L. Roux, E. Cassan, S. Laval, P. Grosse and S. Poncet, 210th ECS meeting: SiGe and Ge Materials, Processing and Devices, Vol. 3 (2006) p. 771.
3. 3. R.F. Potter, Handbook of Optical Constants of Solids, ed. E.D. Palik (Orlando, Fl: Academic, 1985), 465 pp.
4. 4. L. Clavelier 2006 ECS Trans. 3 789 10.1149/1.2355874 1:CAS:528:DC%2BD2sXmsl2ms74%3D L. Clavelier, et al., ECS Trans. 3, 789 (2006)
5. 5. C.-Y. Yu C.-Y. Lee C.-H. Lin C.W. Liu 2006 Appl. Phys. Lett. 89 101913 10.1063/1.2347116 C.-Y. Yu, C.-Y. Lee, C.-H. Lin, C.W. Liu, Appl Phys. Lett. 89, 101913 (2006)
6. 6. S.J. Koester, C.L. Schow, L. Schares, G. Dehlinger, J.D. Schaub, F.E. Doany, and R.A. John, IEEE J. Quantum Electron, J. Light Wave Technol., 25 (2007) p. 46.
7. 7. T. Tezuka N. Sugiyama T. Mizuno M. Suzuki S. Takagi 2001 Jpn. J. Appl. Phys. Pt. I 40 2866 10.1143/JJAP.40.2866 1:CAS:528:DC%2BD3MXktVWgtrs%3D T. Tezuka, N. Sugiyama, T. Mizuno, M. Suzuki, S. Takagi, Jpn. J. Appl. Phys Part I 40, 2866 (2001)
8. 8. S. Nakaharai T. Tezuka N. Sugiyama Y. Moriyama S. Takagi 2003 Appl. Phys. Lett. 83 3516 10.1063/1.1622442 1:CAS:528:DC%2BD3sXosVeisL4%3D S. Nakaharai, T. Tezuka, N. Sugiyama, Y. Moriyama, S. Takagi, Appl. Phys. Lett. 83, 3516 (2003)
9. 9. S. Balakumar C.H. Tung G.Q. Lo R. Kumar N. Balasubramanian D.L. Kwong G. Fei S.J. Lee 2006 Appl. Phys. Lett. 89 032101 10.1063/1.2222343 S. Balakumar, C.H. Tung, G.Q. Lo, R. Kumar, N. Balasubramanian, D.L. Kwong, G. Fei, S.J. Lee, Appl. Phys. Lett. 89, 032101 (2006)
10. 10. V. Terzieva M. Caymax L. Souriau M. Meuris 2006 ECS Trans. 3 1023 10.1149/1.2355896 1:CAS:528:DC%2BD2sXmsl2msbw%3D V. Terzieva, M. Caymax, L. Souriau, M. Meuris, ECS Trans. 3, 1023 (2006)
11. 11. M.M. Roy A. Agarwal S. Balakumar A.Y. Du A.D. Trigg R. Kumar N. Balasubramanian D.L. Kwong 2005 Electrochem. Solid State Lett. 8 G164 10.1149/1.1921132 M.M. Roy, A. Agarwal, S. Balakumar, A.Y. Du, A.D. Trigg, R. Kumar, N. Balasubramanian, D.L. Kwong, Electrochem. Solid State Lett. 8, G164 (2005)
12. 12. T. Tezuka N. Hirashita Y. Moriyama S. Nakaharai N. Sugiyama S. Takagi 2007 Appl. Phys. Lett. 90 181918 10.1063/1.2735672 T. Tezuka, N. Hirashita, Y. Moriyama, S. Nakaharai, N. Sugiyama, S. Takagi, Appl. Phys. Lett. 90, 181918 (2007)
13. 13. S. Balakumar G.Q. Lo C.H. Tung R. Kumar N. Balasubramanian D.L. Kwong C.S. Ong M.F. Li 2006 Appl. Phys. Lett. 89 042115 10.1063/1.2222341 S. Balakumar, G.Q. Lo, C.H. Tung, R. Kumar, N. Balasubramanian, D.L. Kwong, C.S. Ong, M.F. Li, Appl. Phys. Lett. 89, 042115 (2006)
14. 14. T. Shiumra M. Shimizu S. Horiuchi H. Watanabe K. Yasutake M. Umeno 2006 Appl. Phys. Lett. 89 111923 10.1063/1.2353812 T. Shiumra, M. Shimizu, S. Horiuchi, H. Watanabe, K. Yasutake, M. Umeno, Appl. Phys. Lett. 89, 111923 (2006)
15. 15. S. Balakumar S. Peng K.M. Moe A. Agarwal G.Q. Lo R. Kumar N. Balasubramanian D.L. Kwong S. Tripathy 2007 Appl. Phys. Lett. 90 032111 10.1063/1.2432252 S. Balakumar, S. Peng, K.M. Moe, A. Agarwal, G.Q. Lo, R. Kumar, N. Balasubramanian, D.L. Kwong, S. Tripathy, Appl. Phys. Lett. 90, 032111 (2007)
16. 16. W.C. Dash 1956 J. Appl. Phys. 27 1193 10.1063/1.1722229 1:CAS:528:DyaG2sXkvFOm W.C. Dash, J. Appl. Phys. 27, 1193 (1956)
17. 17. S. Nakaharai, T. Tezuka, N. Hirashita, E. Toyoda, Y. Moriyama, N. Sugiyama, and S. Takagi, Semicond. Sci. Technol. 22, S103 (2007).
18. 18. S.W. Bedell, K. Fogel, and D.K. Sadana, Appl. Phys. Lett. 85, 5869 (2004).
19. 19. S. Balakumar, S.C.S. Ong, C.H. Tung, A. Trigg, M.F. Li, R. Kumar, G.Q. Lo, N. Balasubramanian, Y.C. Yeo, and D.L. Kwong, Proc. IPFA 2006 (2006) p. 150.
20. 20. S. Tripathy, S.A. Oh, Y.L. Foo, S. Balakumar, N. Balasubramanian, and D.L. Kwong, Appl. Phys. Lett. (submitted).
21. 21. J.C. Tsang P.M. Mooney F. Dacol J.O. Chu 1994 J. Appl. Phys. 75 8098 10.1063/1.356554 1:CAS:528:DyaK2cXkvFylurY%3D J.C. Tsang, P.M. Mooney, F. Dacol, J.O. Chu, J. Appl. Phys. 75, 8098 (1994)
22. 22. X.H. Zheng H. Chen Y.K. Li Q. Huang J.M. Zhou 2004 J. Cryst. Growth 264 104 10.1016/j.jcrysgro.2003.12.064 1:CAS:528:DC%2BD2cXhs12gsb8%3D X.H. Zheng, H. Chen, Y.K. Li, Q. Huang, J.M. Zhou, J. Crys. Growth 264, 104 (2004)
23. 23. P.H. Tan K. Brunner D. Bougeard G. Abstreiter 2003 Phys. Rev. B 68 125302 10.1103/PhysRevB.68.125302 P.H. Tan, K. Brunner, D. Bougeard, G. Abstreiter, Phys. Rev. B 68, 125302 (2003)
24. 24. F. Cerdeira C.J. Buchenauer F.H. Pollak M. Cardona 1972 Phys. Rev. B 5 580 10.1103/PhysRevB.5.580 F. Cerdeira, C.J. Buchenauer, F.H. Pollak, M. Cardona, Phys. Rev. B 5, 580 (1972)
25. 25. W.J. Brya 1973 Soild State Commun. 12 253 10.1016/0038-1098(73)90692-3 1:CAS:528:DyaE3sXhtFOitLs%3D W.J. Brya, Soild State Commun. 12, 253 (1973)