A parabolic potential barrier-oriented compact model for the kBT layer's width in nano-MOSFETs

IEEE Transactions on Electron Devices

Volumn 55, Issue 5, 2008, Pages 1265-1268

  Chen, Ming Jer ^a   Lu, Li Fang ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Backscattering; MOSFET; Nanometer

Indexed keywords

COMPUTATIONAL GEOMETRY; COMPUTER SIMULATION; ELECTRIC POTENTIAL; GATES (TRANSISTOR); MATHEMATICAL MODELS; THERMAL ENERGY;

GATE VOLTAGE; NANO-MOSFETS; NANOMETER; SOURCE-CHANNEL JUNCTION BARRIER;

MOSFET DEVICES;

EID: 43749100946     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.919317     Document Type: Article

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