High-performance nanowire TFTs with metal-induced lateral crystallized poly-Si channels

IEEE Electron Device Letters

Volumn 29, Issue 5, 2008, Pages 474-476

  Chang, Chia Wen ^a   Chen, Szu Fen ^b   Chang, Che Lun ^a   Deng, Chih Kang ^a   Huang, Jiun Jia ^a   Lei, Tan Fu ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b CHUNGHWA PICTURE TUBES LTD   (Taiwan)

Author keywords

Metal induced lateral crystallization (MILC); Nanowires (NWs); Thin film transistors (TFTs); Triple gate structure

Indexed keywords

FIELD EFFECT SEMICONDUCTOR DEVICES; NANOWIRES; POLYSILICON; THRESHOLD VOLTAGE;

METAL-INDUCED LATERAL CRYSTALLIZATION; TRIPLE-GATE STRUCTURE;

THIN FILM TRANSISTORS;

EID: 43549102427     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.920977     Document Type: Article

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