A high-performance polysilicon thin-film transistor using XeCl excimer laser crystallization of pre-patterned amorphous Si films

IEEE Transactions on Electron Devices

Volumn 43, Issue 4, 1996, Pages 561-567

  Cao, Min ^a   Talwar, Somit ^a   Josef Kramer, K ^a   Sigmon, Thomas W ^a   Saraswat, Krishna C ^a  

^a Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; CRYSTALLIZATION; ELECTRIC CURRENTS; ELECTRONS; EXCIMER LASERS; GRAIN GROWTH; LASER BEAM EFFECTS; LOW TEMPERATURE OPERATIONS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SUBSTRATES; XENON;

LASER ENERGY DENSITY; POLYSILICON THIN FILM TRANSISTOR; PREPATTERNED AMORPHOUS SILICON FILMS; XENON CHLORIDE;

THIN FILM TRANSISTORS;

EID: 0030129175     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.485538     Document Type: Article

References (13)

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