The application of an ultrathin ALD HfSiON cap layer on SiON dielectrics for Ni-FUSI CMOS technology targeting at low-power applications

IEEE Electron Device Letters

Volumn 28, Issue 7, 2007, Pages 634-636

  Chang, Shou Zen ^a   Yu, Hong Yu ^a   Veloso, A ^a   Lauwers, A ^a   Delabie, A ^a   Everaert, J L ^a   Kerner, C ^a   Absil, P ^a   Hoffmann, T ^a   Biesemans, S ^a  

^a IMEC   (Belgium)

Author keywords

HfSiOx cap layer; Low power CMOS; Ni fully silicide (FUSI); Ring oscillator (RO); SiON

Indexed keywords

GATE CAPACITANCE; GATE LEAKAGE; RING OSCILLATOR;

CAPACITANCE; DIELECTRIC MATERIALS; GATES (TRANSISTOR); LEAKAGE CURRENTS; SEMICONDUCTING SILICON COMPOUNDS; ULTRATHIN FILMS;

CMOS INTEGRATED CIRCUITS;

EID: 34447274063     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.899331     Document Type: Article

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