Electroless copper deposition as a seed layer on TiSiN barrier

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 22, Issue 4, 2004, Pages 1852-1856

  Ee, Y C ^a   Chen, Z ^a   Xu, S ^b   Chan, L ^c   See, K H ^c   Law, S B ^c  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^c CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION BARRIERS; ELECTROLESS COPPER DEPOSITION; FIELD EMISSION SCANNING; SEED LAYERS;

ACTIVATION ANALYSIS; ARGON; CRYSTAL ORIENTATION; ELECTROLESS PLATING; GAS METERS; GRAIN SIZE AND SHAPE; SCANNING ELECTRON MICROSCOPY; SURFACE ROUGHNESS; TITANIUM COMPOUNDS; X RAY DIFFRACTION ANALYSIS;

COPPER;

EID: 4344708173     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1738658     Document Type: Conference Paper

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