Two-dimensional electron gas recombination in undoped AlGaN/GaN heterostructures

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 6 A, 2004, Pages 3360-3366

  Martínez Criado, Gema ^a,c   Miskys, Claudio ^a   Karrer, Uwe ^a   Ambacher, Oliver ^b   Stutzmann, Martin ^a  

^a WALTER SCHOTTKY INSTITUT   (Germany)

^b ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

^c EUROPEAN SYNCHROTRON RADIATION FACILITY   (France)

Author keywords

AlGaN GaN heterostuctures; Excitons; Photoluminescence; Two dimensional electron gas

Indexed keywords

CARRIER CONCENTRATION; ELECTRON GAS; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS;

INTERFACIAL BAND BENDING; SHEET CARRIER CONCENTRATION; STRUCTURAL DEFECTS; TWO-DIMENSIONAL ELECTRON GAS;

HETEROJUNCTIONS;

EID: 4344684889     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.3360     Document Type: Article

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