Texture evolutions of ionized metal plasma Cu seed layers on tantalum nitride barriers

IEEE Transactions on Semiconductor Manufacturing

Volumn 17, Issue 3, 2004, Pages 384-387

  Chang, Shih Chieh ^a   Wang, Ying Lang ^a   Wang, Ting Chun ^a  

^a TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

Barrier layer; Copper seed layer; Ionized metal plasma; Nitrogen flow; Tantalum nitride; Texture transformation

Indexed keywords

ASPECT RATIO; ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; DEPOSITION; ELECTROMIGRATION; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; INTERFACIAL ENERGY; IONIZATION; PHYSICAL VAPOR DEPOSITION; PLASMAS; TANTALUM COMPOUNDS; X RAY DIFFRACTION;

BARRIER LAYERS; COPPER SEED LAYERS; IONIZED METAL PLASMAS; NITROGEN FLOW; TANTALUM NITRIDE; TEXTURE TRANSFORMATION;

COPPER;

EID: 4344676384     PISSN: 08946507     EISSN: None     Source Type: Journal    
DOI: 10.1109/TSM.2004.831535     Document Type: Conference Paper

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