Investigation of GaN LED with be-implanted Mg-doped GaN layer

Materials Science and Engineering: B

Volumn 113, Issue 1, 2004, Pages 19-23

  Huang, Hung Wen ^a   Kao, C C ^a   Chu, J T ^a   Kuo, H C ^a   Wang, S C ^a   Yu, C C ^b   Lin, C F ^c  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b Global Union Technology Corporation   (Taiwan)

^c NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

Author keywords

Gallium nitride (GaN); Light emitting diode (LED)

Indexed keywords

BERYLLIUM; CARRIER CONCENTRATION; DOPING (ADDITIVES); ELECTRIC RESISTANCE; GALLIUM NITRIDE; ION IMPLANTATION; MAGNESIUM PRINTING PLATES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OHMIC CONTACTS; RAPID THERMAL ANNEALING; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS;

CONTACT RESISTANCE; HOLE CARRIERS; MULTIPLE QUANTUM WELLS (MQW);

LIGHT EMITTING DIODES;

EID: 4344586216     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2004.05.024     Document Type: Article

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