Effect of rapid thermal annealing on beryllium implanted p-type GaN

Materials Science and Engineering: B

Volumn 107, Issue 3, 2004, Pages 237-240

  Huang, Hung Wen ^a   Kao, C C ^a   Tsai, J Y ^a   Yu, C C ^a   Chu, C F ^a   Lee, J Y ^a   Kuo, S Y ^a   Lin, C F ^a   Kuo, H C ^b   Wang, S C ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b INSTRUMENT TECHNOLOGY RESEARCH CENTER   (Taiwan)

Author keywords

Beryllium; GaN; Implantation; MSA; RTA; SSA

Indexed keywords

BERYLLIUM; COMPUTER SIMULATION; ELECTRON TRANSITIONS; ISOTHERMS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; RAPID THERMAL ANNEALING; X RAY DIFFRACTION ANALYSIS;

IMPLANTATION; MULTIPLE STEP ANNEALING (MSA); SINGLE STEP ANNEALING (SSP);

GALLIUM NITRIDE;

EID: 12144286017     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2003.12.001     Document Type: Article

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