The role of the mercury-Si schottky-barrier height in ψ-MOSFETs

IEEE Transactions on Electron Devices

Volumn 51, Issue 7, 2004, Pages 1164-1168

  Choi, J Y ^a   Ahmed, S ^a   Dimitrova, T ^b   Chen, J T C ^c   Schroder, D K ^c  

^a Arizona State University   (United States)

^b Four Dimensions Inc   (United States)

^c IEEE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING DENSITY; PSEUDO MOSFET; SEMICONDUCTOR DEVICE MEASUREMENTS;

CURRENT VOLTAGE CHARACTERISTICS; ETCHING; INTERFACES (MATERIALS); PASSIVATION; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR JUNCTIONS; SILICON ON INSULATOR TECHNOLOGY;

MOSFET DEVICES;

EID: 4344569226     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2004.830650     Document Type: Article

References (21)

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