Improved characterization of fully-depleted SOI wafers by pseudo-MOS transistor

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 112, Issue 1-4, 1996, Pages 228-232

  Ionescu, A M ^a   Cristoloveanu, S ^a   Wilson, S R ^b   Rusu, A ^a   Chovet, A ^a   Seghir, H ^a  

^a Grenoble INP Phelma   (France)

^b MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INTERFACES (MATERIALS); ION IMPLANTATION; MOSFET DEVICES; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING; SILICON ON INSULATOR TECHNOLOGY;

INTERFACE STATE DENSITY; SEPARATION BY OXYGEN IMPLANTATION (SIMOX); SERIES RESISTANCE;

SILICON WAFERS;

EID: 0030563524     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-583X(95)01279-6     Document Type: Article

References (4)

1. S. Cristoloveanu and S.S. Li, Electrical Characterization of SOI Materials and Devices (Kluwer, Dordrecht, 1995).
2. S. Williams and S. Cristoloveanu, Microelectron. Eng. 15 (1991) 195.
3. S. Cristoloveanu and S. Williams, IEEE Electron Dev. Lett. 13 (1992) 102.
4. T. Ouisse, Internal Research Report, LETI Grenoble, France (1992).