HgFET: A new characterization tool for SOI silicon film properties

IEEE International SOI Conference

Volumn , Issue , 1997, Pages 180-181

  Hovel, H J ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; FIELD EFFECT TRANSISTORS; POINT CONTACTS; SEMICONDUCTING FILMS; SILICON WAFERS; SURFACE TREATMENT;

MERCURY FIELD EFFECT TRANSISTORS;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0031335850     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)