High-power high-efficiency 2D VCSEL arrays

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6908, Issue , 2008, Pages

  Seurin, Jean Francois ^a   Ghosh, Chuni L ^a   Khalfin, Viktor ^a   Miglo, Aleksandr ^a   Xu, Guoyang ^a   Wynn, James D ^a   Pradhan, Prachi ^a   D'Asaro, L Arthur ^a  

^a Princeton Optronics   (United States)

Author keywords

2D array; Brightness; High efficiency; High power; Pumping; Reliability; Semiconductor lasers; Solid state laser; Vertical cavity surface emitting lasers (VCSELs)

Indexed keywords

PUMPING (LASER); RELIABILITY THEORY; SEMICONDUCTOR LASERS; SOLID STATE LASERS;

CONTINUOUS-WAVE (CW) POWER; POWER CONVERSION EFFICIENCY;

SURFACE EMITTING LASERS;

EID: 43249096474     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.774126     Document Type: Conference Paper

References (34)

1. N. M. Margalit, S. Z. Zhang, and J. E. Bowers, "Vertical cavity lasers for telecom applications," IEEE Communications Magazine, May issue, 164-170 (1997).
2. K. S. Giboney, L. B. Aronson, and B. E. Lemoff, "The ideal light source for datanets," IEEE Spectrum, 35(2), 43-53 (1998).
3. F. H. Peters, M. G. Peters, D. B. Young, J. W. Scott, B. J. Thibeault, S. W. Corzine, and L. A. Coldren, "High-power vertical-cavity surface-emitting lasers," Electron. Lett., 29(2), 200-201 (1993).
4. M. Grabherr, R. Jäger, M. Miller, C. Thalmaier, J. Herlein, R. Michalzik, and K. J. Ebeling, "Bottom-emitting VCSEL's for high-CW optical output power," IEEE Photon. Technol. Lett., 10(8), 1061-1063 (1998).
5. D. Francis, H.-L. Chen, W. Yuen, G. Li, and C. Chang-Hasnain, "Monolithic 2D-VCSEL array with >2 W CW and >5 W pulsed output power," Electron. Lett, 34(22), 2132-2133 (1998).
6. M. Miller, M. Grabherr, R. Jäger, and K. J. Ebeling, "High-power VCSEL arrays for emission in the Watt regime at room temperature," IEEE Photon. Technol. Lett., 13(5), 173-175 (2001).
7. L. A. D'Asaro, J-F. Seurin, and J. D. Wynn, "High-power, high efficiency VCSELs pursue the goal," Photonics Spectra, 64-66 (February 2005).
8. K. D. Choquette and H. Q. Hou, "Vertical-cavity surface-emitting lasers: moving from research to manufacturing," Proc. IEEE, 85(11), 1730-1739 (1997).
9. J. A. Tatum, A. Clark, J. K. Guenter, R. A. Hawthorne III, and R. H. Johnson, "Commercialization of Honeywell's VCSEL technology," Proc. SPIE, 3946, 2-13 (2000).
10. M. Kanskar, T. Earles, T. J. Goodnough, E. Stiers, D. Botez, and L. J. Mawst, "73% CW power conversion efficiency at 50 W from 970 nm diode laser bars," Electron. Lett., 41(5), 245-247 (2005).
11. A. Moser and E. E. Latta, "Arrhenius parameters for the rate process leading to catastrophic optical damage of AlGaAs-GaAs laser facets," J. Appl. Phys., 71(10), 4848-4853 (1992).
12. R. A. Morgan, M. K. Hibbs-Brenner, T. M. Marta, R. A. Walterson, S. Bounnak, E. L. Kalweit, and J. A. Lehman, "200°C, 96-nm wavelength range, continuous-wave lasing from unbonded GaAs MOVPE-grown vertical cavity surface-emitting lasers," IEEE Photon. Technol. Lett., 7(5), 441-443 (1995).
13. L. A. D'Asaro, J-F. Seurin, and C. Ghosh, "Powerful VCSEL arrays beat the heat," Laser Focus World, 43(11), 81-83 (2007).
14. K. L. Lear, K. D. Choquette, R. P. Schneider, Jr., S. P. Kilcoyne, and K. M. Geib, "Selectively oxidized vertical cavity surface emitting lasers with 50% power conversion efficiency," Electron. Lett., 31(3), 208-209 (1995).
15. R. Michalzik, M. Grabherr, and K. J. Ebeling, "High-power VCSELs: modeling and experimental characterization," Proc. SPIE, 3286, 206-219 (1998).
16. 1-x As-AlAs-GaAs quantum well heterostructures and superlattices," Appl. Phys. Lett., 57(26), 2844-2846 (1990).
17. D. L. Huffaker, D. G. Deppe, K. Kumar, and T. J. Rogers, "Native-oxide defined ring contact for low threshold vertical-cavity lasers," Appl. Phys. Lett., 65(1), 97-99 (1994).
18. G. M. Yang, M. H. MacDougal, V. Pudikov, and P. D. Dapkus, "Influence of mirror reflectivity on laser performance of very-low-threshold vertical-cavity surface-emitting lasers," IEEE Photon. Technol. Lett., 7(11), 1228-1230 (1995).
19. A. E. Bond, P. D. Dapkus, and J. D. O'Brien, "Aperture placement effects in oxide-defined vertical-cavity surface-emitting lasers," IEEE Photon. Technol. Lett., 10(10), 1362-1364 (1998).
20. E. R. Hegblom, N. M. Margalit, A. Fiore, and L. A. Coldren, "High-performance small vertical-cavity lasers: a comparison of measured improvements in optical and current confinement in devices using tapered apertures," IEEE J. Select. Topics Quantum Electron., 5(3), 553-560 (1999).
21. E. R. Hegblom, N. M. Margalit, B. J. Thibeault, L. A. Coldren, and J. E. Bowers, "Current spreading in apertured vertical cavity lasers," Proc. SPIE, 3003, 176-180 (1997).
22. 1-x As/GaAs mirrors for vertical-cavity surface-emitting lasers," J. Vac. Sci. Technol. B, 12(6), 3075-3083 (1994).
23. D. P. Bour and A. Rosen, "Optimum cavity length for high conversion efficiency quantum well diode lasers," J. Appl. Phys., 66(7), 2813-2818 (1989).
24. L. A. Coldren and S. W. Corzine, Diode Lasers and Photonic Integrated Circuits, Wiley-Interscience, New York, 1995.
25. P. A. Barnes and T. L. Paoli, "Derivative measurements of the current-voltage characteristics of double-heterostructure injection lasers," IEEE J. Quantum Electron., 12(10), 633-639 (1976).
26. J. Li, J.-F. Seurin, and S. L. Chuang, "Correlation of electrical and optical characteristics of selectively oxidized vertical-cavity surface-emitting lasers," Appl. Phys. Lett., 70(14), 1799-1801 (1997).
27. K. L. Lear, S. P. Kilcoyne, and S. A. Chalmers, "High power conversion efficiencies and scaling issues for multimode vertical-cavity top-surface-emitting lasers," IEEE Photon. Technol. Lett., 6(7), 778-781 (1994).
28. R. L. Naone, P. D. Floyd, D. B. Young, E. R. Hegblom, T. A. Strand, and L. A. Coldren, "Interdiffusion quantum wells for lateral carrier confinement in VCSEL's," IEEE J. Select Topics Quantum Electron., 4(4), 706-714 (1998).
29. D. D. Lofgreen, Y.-C. Chang, and L. A. Coldren, "Vertical-cavity surface-emitting lasers with lateral carrier confinement," IEE Electron. Lett., 43(3), 163-164 (2007).
30. D. Bimberg, N. Kirstaedter, N. N. Ledentsov, Zh. I. Alferov, P. S. Kop'ev, and V. M. Ustinov, "InGaAs-GaAs quantum-dot lasers," IEEE J. Quantum Electron., 3(2), 196-205 (1997).
31. G. T. Liu, A. Stintz, H. Li, T. C. Newell, A. L. Gray, P. M. Varangis, K. J. Malloy, and L. F. Lester, "The influence of quantum-well composition on the performance of quantum dot lasers using InAs/InGaAs dots-in-a-well (DWELL) structures," IEEE J. Quantum Electron., 36(11), 1272-1279 (2000).
32. N.-H. Kim, J.-H. Park, L. J. Mawst, T. F. Kuech, and M. Kanskar, "Temperature sensitivity of InGaAs quantum-dot lasers grown by MOCVD," IEEE Photon. Technol. Lett., 18(8), 989-991 (2006).
33. E. Yu, M. Osiński, W. Nakwaski, M. Turowski, and A. Przekwas, "Thermal crosstalk in arrays of proton-implanted top-surface emitting lasers," Proc. SPIE, 3283, 384-395 (1998).
34. M. Grabherr, M. Miller, R. Jager, R. Michalzik, U. Martin, H. Unold, and K. J. Ebeling, "High-power VCSEL's: single devices and densely packed 2-D-arrays," IEEE J. Select. Topics Quantum Electron., 5(3), 495-502 (1999).