Aperture placement effects in oxide-defined vertical-cavity surface-emitting lasers

IEEE Photonics Technology Letters

Volumn 10, Issue 10, 1998, Pages 1362-1364

  Bond, Aaron E ^a,b   Dapkus, P Daniel ^a,b   O'Brien, John D ^a,b  

^a IEEE   (United States)

^b UNIVERSITY OF SOUTHERN CALIFORNIA   (United States)

Author keywords

Aluminum arsenide oxide; Distributed Bragg reflector lasers; Semiconductor lasers; Surface emitting lasers

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC FIELDS; ELECTROMAGNETIC WAVE DIFFRACTION; SEMICONDUCTING ALUMINUM COMPOUNDS;

APERTURE PLACEMENT EFFECTS; DISTRIBUTED BRAGG REFLECTOR LASERS; VERTICAL CAVITY SURFACE EMITTING LASERS (VCSEL);

SEMICONDUCTOR LASERS;

EID: 0032187073     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.720261     Document Type: Article

References (17)

1. D. L. Huffaker, D. G. Deppe, and K. Kumar, "Native-oxide defined ring contact for low threshold vertical-cavity lasers," Appl. Phys. Lett., vol. 65, no. 1, pp. 97-99, 1994.
2. K. L. Lear, K. D. Choquette, R. P. Schneider, Jr., S. P. Kilcoyne, and K. M. Geib, "Selectively oxidised vertical cavity surface emitting lasers with 50% power conversion efficiency," Electron. Lett., vol. 31, no. 3, pp. 208-209, 1995.
3. G. M. Yang, M. H. MacDougal, and P. D. Dapkus, "Ultralow threshold current vertical-cavity surface-emitting lasers obtained with selective oxidation," Electron. Lett., vol. 31, pp. 886-888, 1995.
4. D. L. Huffaker, L. A. Graham, H. Deng, and D. G. Deppe, "Sub-40 μA continuous-wave lasing in an oxidized vertical-cavity surface-emitting laser with dielectric mirrors," IEEE Photon. Technol. Lett., vol. 8, pp. 974-976, Aug. 1996.
5. D. L. Huffaker and D. G. Deppe, "Improved performance of oxide-confined vertical-cavity surface-emitting lasers using a tunnel injection active region," Appl. Phys. Lett., vol. 71, no. 11, pp. 1449-1451, 1997.
6. R. Jäger, M. Grabherr, C. Jung, R. Michalzik, G. Reiner, B. Weigl, and K. J. Ebeling, "57% Wallplug efficiency oxide-confined 850 nm wavelength GaAs VCSELO's," Electron. Lett., vol. 33, pp. 330-331, 1997.
7. 1-xAs-AlAs-GaAs quantum well heterostructures and superlattices," Appl. Phys. Lett., vol. 57, pp. 2844-2846, 1990.
8. K. D. Choquette, R. P. Schneider, Jr., K. L. Lear, and K. M. Geib, "Low threshold voltage vertical-cavity lasers fabricated by selective oxidation," Electron. Lett., vol. 30, no. 24, pp. 2043-2044, 1994.
9. D. G. Deppe, D. L. Huffaker, J. Shin, and Q. Deng, "Very-low-threshold index-confined planar microcavity lasers," IEEE Photon. Technol. Lett., vol. 7, pp. 965-967, Sept. 1995.
10. D. G. Deppe, D. L. Huffaker, T. H. Oh, H. Deng, and Q. Deng, "Low-threshold vertical-cavity surface-emitting lasers based on oxide-confinement and high contrast distributed Bragg reflectors," IEEE J. Select. Topics Quantum Electron., vol. 3, pp. 893-904, June 1997.
11. E. R. Hegblom, D. I. Babic, B. J. Thibeault, and L. A. Coldren, "Scattering losses from dielectric apertures in vertical-cavity lasers," IEEE J. Select. Topics Quantum Electron., vol. 3, pp. 379-389, Apr. 1997.
12. H. K. Bissessur, F. Koyama, and K. Iga, "Modeling of oxide-confined vertical-cavity surface-emitting lasers," IEEE J. Select. Topics Quantum Electron., vol. 3, pp. 344-352, Apr. 1997.
13. K. Y. Chang, J. Woodhead, and P. N. Robson, "Modal and threshold analysis of dielectric-apertured vertical cavity surface emitting lasers," Appl. Phsy. Lett., vol. 72, no. 3, pp. 335-337, Jan. 1998.
14. K. D. Choquette, W. W. Chow, G. R. Hadley, H. Q. Hou, and K. M. Geib, "Scalability of small-aperture selectively oxidized vertical cavity lasers," Appl. Phys. Lett., vol. 70, no. 7, pp. 823-825, Feb. 1997.
15. A. E. Bond and P. D. Dapkus, "Monolithically integrated surface and substrate emitting vertical cavity lasers with spatially selective distributed Bragg reflectors." Appl. Phys. Lett., to be published.
16. A. E. Bond, P. D. Dapkus, and J. D. O'Brien, unpublished.
17. T.-H. Oh, D. L. Huffaker, and D. G. Deppe, "Size effects in small oxide confined vertical-cavity surface-emitting lasers," Appl. Phys. Lett., vol. 69, no. 21, pp. 3152-3154, Nov. 1996.